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Giant Carrier Mobility in Single Crystals of FeSb2

Strongly Correlated Electrons 2009-11-13 v1 Materials Science
Authors: Rongwei Hu , V. F. Mitrovic , C. Petrovic
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Abstract

We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs at the room temperature. Our results point to a class of materials with promising potential for applications in solid state electronics.

Keywords

carrier mobility FeSb2 single crystals Hall resistivity two-carrier model nonlinear field dependence solid state electronics

Cite

@article{arxiv.0804.3625,
  title  = {Giant Carrier Mobility in Single Crystals of FeSb2},
  author = {Rongwei Hu and V. F. Mitrovic and C. Petrovic},
  journal= {arXiv preprint arXiv:0804.3625},
  year   = {2009}
}

Comments

5 pages, 3 figures. Applied Physics Letters (in press)

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