High Magnetic Field Sensor Using LaSb2

D. P. Young; R. G. Goodrich; J. F. DiTusa; S. Guo; J. Chan; D. Hall; P. W. Adams

doi:10.1063/1.1577390

High Magnetic Field Sensor Using LaSb2

Materials Science 2009-11-10 v1 Strongly Correlated Electrons

Authors: D. P. Young , R. G. Goodrich , J. F. DiTusa , S. Guo , J. Chan , D. Hall , P. W. Adams

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Abstract

The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2} becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n ~ 3x10^20 cm^-3. The feasibility of using LaSb2 for magnetic field sensors is discussed.

Keywords

magnetoresistance mgb2 superconductivity single crystal superconductivity

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@article{arxiv.cond-mat/0305116,
  title  = {High Magnetic Field Sensor Using LaSb2},
  author = {D. P. Young and R. G. Goodrich and J. F. DiTusa and S. Guo and J. Chan and D. Hall and P. W. Adams},
  journal= {arXiv preprint arXiv:cond-mat/0305116},
  year   = {2009}
}

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High Magnetic Field Sensor Using LaSb2

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