Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.
@article{arxiv.1502.03523,
title = {High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi},
author = {Zhipeng Hou and Wenhong Wang and Guizhou Xu and Xiaoming Zhang and Zhiyang Wei and Shipeng Shen and Enke Liu and Yuan Yao and Yisheng Chai and Young Sun and Xuekui Xi and Wenquan Wang and Zhongyuan Liu and Guangheng Wu and Xi-xiang Zhang},
journal= {arXiv preprint arXiv:1502.03523},
year = {2016}
}
Comments
26 pages,10 pages, 1 SUPPLEMENTARY, accepted for publication in Physical review B