Magneto-transport and Electronic Structures of BaZnBi$_2$

Yi-Yan Wang; Peng-Jie Guo; Qiao-He Yu; Sheng Xu; Kai Liu; Tian-Long Xia

doi:10.1088/1367-2630/aa95e7

Magneto-transport and Electronic Structures of BaZnBi$_2$

Materials Science 2017-12-25 v1 Mesoscale and Nanoscale Physics

Authors: Yi-Yan Wang , Peng-Jie Guo , Qiao-He Yu , Sheng Xu , Kai Liu , Tian-Long Xia

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Abstract

We report the magneto-transport properties and electronic structures of BaZnBi $_2$ . BaZnBi $_2$ is a quasi-two-dimensional (2D) material with metallic behavior. The transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov-de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combining with the trivial Berry phase extracted from SdH oscillation, BaZnBi $_2$ is suggested to be a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi $_2$ .

Keywords

magneto-transport electronic structure Shubnikov-de Haas oscillation topologically trivial semimetal Berry phase

Cite

@article{arxiv.1708.06531,
  title  = {Magneto-transport and Electronic Structures of BaZnBi$_2$},
  author = {Yi-Yan Wang and Peng-Jie Guo and Qiao-He Yu and Sheng Xu and Kai Liu and Tian-Long Xia},
  journal= {arXiv preprint arXiv:1708.06531},
  year   = {2017}
}

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6 pages, 6 figures

Magneto-transport and Electronic Structures of BaZnBi$_2$

Abstract

Keywords

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