We present new data and a compact mobility model for single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest the room temperature mobility does not exceed 10,000 cm2/V.s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.
@article{arxiv.0907.1261,
title = {Multi-Band Mobility in Semiconducting Carbon Nanotubes},
author = {Y. Zhao and A. Liao and E. Pop},
journal= {arXiv preprint arXiv:0907.1261},
year = {2010}
}