Electronic Transport in a Topological Semimetal WTe2 Single Crystal

A. N. Perevalova; S. V. Naumov; V. V. Chistyakov; E. B. Marchenkova; B. M. Fominykh; V. V. Marchenkov

doi:10.1134/S0031918X22601329

Electronic Transport in a Topological Semimetal WTe2 Single Crystal

Strongly Correlated Electrons 2023-02-02 v1 Other Condensed Matter

Authors: A. N. Perevalova , S. V. Naumov , V. V. Chistyakov , E. B. Marchenkova , B. M. Fominykh , V. V. Marchenkov

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Abstract

Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic temperature dependences of the electrical resistivity in the absence of a magnetic field and the conductivity in a magnetic field are observed at low temperatures, which is apparently associated with contributions from various scattering mechanisms. Single-band and two-band models were used to analyze data on the Hall effect and magnetoresistivity. These results indicate electron-hole compensation with a slight predominance of electron charge carriers.

Keywords

electronic transport topological semimetal WTe2 single crystal magnetoresistivity Hall effect electron-hole compensation

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@article{arxiv.2302.00297,
  title  = {Electronic Transport in a Topological Semimetal WTe2 Single Crystal},
  author = {A. N. Perevalova and S. V. Naumov and V. V. Chistyakov and E. B. Marchenkova and B. M. Fominykh and V. V. Marchenkov},
  journal= {arXiv preprint arXiv:2302.00297},
  year   = {2023}
}

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9 pages, 7 figures

Electronic Transport in a Topological Semimetal WTe2 Single Crystal

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