In this paper we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors in push-pull configuration. The switch is capable of switching high voltages up to 600 V on capacitive loads with rise and fall times on the order of 10 ns and pulse widths ≤ 20 ns. Using this switch it was demonstrated that from the charge state distribution of bunches of highly charged ions ejected from an electron beam ion trap with a specific kinetic energy, single charge states can be separated by fast switching of the high voltage applied to a Bradbury-Nielsen Gate with a resolving power of about 100.
@article{arxiv.2311.08068,
title = {Fast Silicon Carbide MOSFET based high-voltage push-pull switch for charge state separation of highly charged ions with a Bradbury-Nielsen Gate},
author = {Christoph Schweiger and Menno Door and Pavel Filianin and Jost Herkenhoff and Kathrin Kromer and Daniel Lange and Domenik Marschall and Alexander Rischka and Thomas Wagner and Sergey Eliseev and Klaus Blaum},
journal= {arXiv preprint arXiv:2311.08068},
year = {2023}
}