Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectroscopy. We controllably convert the charge state between the optically active SiV− and dark SiV2− with MHz rates and 90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV− photoluminescence under hole-capture, measure the intrinsic conversion time from the dark SiV2− to the bright SiV− to be 36.4(6.7)ms and demonstrate how it can be enhanced by a factor of 105 via optical pumping. Moreover, we obtain new information on the defects that contribute to photo-conductivity, indicating the presence of substitutional nitrogen and divacancies.
@article{arxiv.2310.12288,
title = {Fast optoelectronic charge state conversion of silicon vacancies in diamond},
author = {Manuel Rieger and Viviana Villafane and Lina M. Todenhagen and Stephan Matthies and Stefan Appel and Martin S. Brandt and Kai Mueller and Jonathan J. Finley},
journal= {arXiv preprint arXiv:2310.12288},
year = {2024}
}