Related papers: Fast Silicon Carbide MOSFET based high-voltage pus…

Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists…

Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…

The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing…

In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…

Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…

Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…

Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects…

Electric vehicles are rapidly gaining popularity as a sustainable alternative to conventional gasoline. In urban areas, chargers with different ratings can accommodate the diverse needs of electric vehicles. However, the available multiport…

This paper presents a design and implementation of a high-power Gallium Nitride (GaN)-based multilevel Hbridge inverter to excite wireless charging coils for the wireless power transfer of electric vehicles (EVs). Compared to the…

This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…

In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…

Multi-port DC-DC converters are gaining more significance in modern power system environments by enabling the connection of multiple renewable energy sources, so the efficient operation of these converters is paramount. Soft switching…

A concept of a 650 MHz CW magnetron transmitter with fast control in phase and power, based on two-stage injection-locked CW magnetrons, has been proposed to drive Superconducting Cavities (SC) for intensity-frontier accelerators. The…

Highly charged ions (HCIs) are promising candidates for the next generation of atomic clocks, owing to their tightly bound electron cloud, which significantly suppresses the common environmental disturbances to the quantum oscillator. Here…

Superconducting (SC) diodes are key passive building blocks for future SC electronics. However, realizing their active counterparts is essential for functional logic. Here, we demonstrate deterministic nonvolatile electrical switching of…

Carrier transition is one of the major factors hindering the high-speed implementation of the M{\o}lmer-S{\o}rensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for the M{\o}lmer-S{\o}rensen…

A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power…

We propose and demonstrate a polarization-insensitive and high speed optical switch unit based on a silicon and lithium niobate hybrid integration platform. The presented device exhibits a sub nano-second switching time, low drive voltages…

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…