Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.
@article{arxiv.1705.00057,
title = {A 600 Volt Multi-Stage, High Repetition Rate GaN FET Switch},
author = {D. Frolov and H. Pfeffer and G. Saewert},
journal= {arXiv preprint arXiv:1705.00057},
year = {2017}
}