Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Sriram Venkatesan; Morten H. Madsen; Herbert Schmid; Peter Krogstrup; Erik Johnson; Christina Scheu

doi:10.1063/1.4818338

Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Mesoscale and Nanoscale Physics 2013-08-26 v1 Materials Science

Authors: Sriram Venkatesan , Morten H. Madsen , Herbert Schmid , Peter Krogstrup , Erik Johnson , Christina Scheu

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Abstract

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

Keywords

nanowires III-V heterostructures compositional modulation EDS mapping Ga enrichment interface analysis

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@article{arxiv.1308.5089,
  title  = {Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires},
  author = {Sriram Venkatesan and Morten H. Madsen and Herbert Schmid and Peter Krogstrup and Erik Johnson and Christina Scheu},
  journal= {arXiv preprint arXiv:1308.5089},
  year   = {2013}
}

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12 Pages, 4 figures

Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

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