An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits.
@article{arxiv.2112.00924,
title = {Dirac-Source Diode with Sub-unity Ideality Factor},
author = {Gyuho Myeong and Wongil Shin and Seungho Kim and Hongsik Lim and Boram Kim and Taehyeok Jin and Kyunghwan Sung and Jihoon Park and Michael S. Fuhrer and Kenji Watanabe and Takashi Taniguchi and Fei Liu and Sungjae Cho},
journal= {arXiv preprint arXiv:2112.00924},
year = {2022}
}
Comments
28 pages, 14 figures, submitted to Nature Communications