Bulk Intergrowth of a Topological Insulator with a Room Temperature Ferromagnet

Huiwen Ji; J. M. Allred; Ni Ni; Jing Tao; M. Neupane; A. Wray; S. Xu; M. Z. Hasan; R. J. Cava

doi:10.1103/PhysRevB.85.165313

Bulk Intergrowth of a Topological Insulator with a Room Temperature Ferromagnet

Materials Science 2015-06-04 v1

Authors: Huiwen Ji , J. M. Allred , Ni Ni , Jing Tao , M. Neupane , A. Wray , S. Xu , M. Z. Hasan , R. J. Cava

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Abstract

We demonstrate that the layered room temperature ferromagnet Fe7Se8 and the topological insulator Bi2Se3 form crystallographically oriented bulk composite intergrowth crystals. The morphology of the intergrowth in real space and reciprocal space is described. Critically, the basal planes of Bi2Se3 and Fe7Se8 are parallel and hence the good cleavage inherent in the bulk phases is retained. The intergrowth is on the micron scale. Both phases in the intergrowth crystals display their intrinsic bulk properties: the ferromagnetism of the Fe7Se8 is anisotropic, with magnetization easy axis in the plane of the crystals, and ARPES characterization shows that the topological surface states remain present on the Bi2Se3. Analogous behavior is found for what has been called "Fe-doped Bi2Se3."

Keywords

topological insulator room temperature ferromagnet bulk intergrowth Bi2Se3 Fe7Se8 ARPES topological surface states

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@article{arxiv.1202.4957,
  title  = {Bulk Intergrowth of a Topological Insulator with a Room Temperature Ferromagnet},
  author = {Huiwen Ji and J. M. Allred and Ni Ni and Jing Tao and M. Neupane and A. Wray and S. Xu and M. Z. Hasan and R. J. Cava},
  journal= {arXiv preprint arXiv:1202.4957},
  year   = {2015}
}

Bulk Intergrowth of a Topological Insulator with a Room Temperature Ferromagnet

Abstract

Keywords

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