English

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Mesoscale and Nanoscale Physics 2015-06-11 v1

Abstract

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-like states with small amplitudes at the surface. The topological surface states coexist with bulk-like states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulk-like surface states.

Keywords

Cite

@article{arxiv.1210.1874,
  title  = {The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3},
  author = {Megan Romanowich and Mal-Soon Lee and Duck-Young Chung and Jung-Hwan Song and S. D. Mahanti and Mercouri G. Kanatzidis and Stuart H. Tessmer},
  journal= {arXiv preprint arXiv:1210.1874},
  year   = {2015}
}

Comments

14 pages, 3 figures