Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Helin Cao; Suyang Xu; Ireneusz Miotkowski; Jifa Tian; Deepak Pandey; M. Zahid Hasan; Yong P. Chen

doi:10.1002/pssr.201206457

Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Materials Science 2012-12-07 v1

Authors: Helin Cao , Suyang Xu , Ireneusz Miotkowski , Jifa Tian , Deepak Pandey , M. Zahid Hasan , Yong P. Chen

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance.

Keywords

topological insulator Bi2Se3 single crystals Bridgman method angle-resolved photoemission spectroscopy bulk quantum Hall effect transport measurements

Cite

@article{arxiv.1212.1354,
  title  = {Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals},
  author = {Helin Cao and Suyang Xu and Ireneusz Miotkowski and Jifa Tian and Deepak Pandey and M. Zahid Hasan and Yong P. Chen},
  journal= {arXiv preprint arXiv:1212.1354},
  year   = {2012}
}

Comments

7 pages, 4 figures

Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Abstract

Keywords

Cite

Comments

Related papers