Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator

Rabia Sultana; Ganesh Gurjar; S. Patnaik; V. P. S. Awana

Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator

Materials Science 2018-04-27 v2 Strongly Correlated Electrons Superconductivity

Authors: Rabia Sultana , Ganesh Gurjar , S. Patnaik , V. P. S. Awana

Abstract

The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti localization (WAL) related low field (2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami- Larkin - Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

Keywords

sb2te3 topological insulator crystal growth self flux method weak antilocalization hln model

Cite

@article{arxiv.1804.02131,
  title  = {Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator},
  author = {Rabia Sultana and Ganesh Gurjar and S. Patnaik and V. P. S. Awana},
  journal= {arXiv preprint arXiv:1804.02131},
  year   = {2018}
}

Comments

18 Pages Text + Figs: Accepted Mat. Res. Exp. (May 2018)

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