相关论文: Inductive-Adder Kicker Modulator for Darht-2
A novel polarization-modulation transient method has been developed for studying fast anisotropic relaxation in electronic excited states of polyatomic and biologically relevant molecules under excitation with femtosecond laser pulses. The…
The conventional two transistor astable multivibrator has been modified to produce better waveform which are more steeply rising and falling than those from the conventional astable. The improvement in the waveform is achieved by using a…
Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have…
Rate theory and DFT calculations of hydrogen evolution reaction (HER) on MoS2 with Co, Ni and Pt impurities show the significance of dihydrogen (H2*) complex where both hydrogen atoms are interacting with the surface. Stabilization of such…
The paradigmatic Mott insulator arises in strongly correlated systems, where strong local repulsion localizes interacting particles in underlying egg-holder-like potential. The corresponding Mott transition reflects delocalization of the…
A measurement scheme to perform a repeatable phase detection on a two-mode field is presented. The interaction with the probe state (the output state of a phase-insensitive high-gain amplifier) is described by a Hamiltonian which is…
The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at…
TMDs are a new family of 2D materials with features that make them appealing for potential applications in nanomaterials science and engineering. Although, the edges of the 2D TMDs show excellent electrocatalytic performance, their basal…
We calculate the single-particle states of a two-dimensional electron gas (2DEG) in a perpendicular quantizing magnetic field, which is periodic in one direction of the electron layer. We discuss the modulation of the electron density in…
In the vortex core of slightly overdoped Bi2Sr2CaCu2Ox, the electron-like and hole-like states have been found to exhibit spatial modulations in anti-phase with each other along the Cu-O bonding direction. Some kind of one-dimensionality…
Phase modulation plays a crucial role in various terahertz applications, including biomedical imaging, high-rate communication, and radar detection. Existing terahertz phase shifters typically rely on tuning the resonant effect of…
In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the doping dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation…
The Diagnostic Neutral Beam Injector (DNBI) of the RFX-mod2 experiment (Consorzio RFX, Padova) is expected to provide novel and significant information about the Reversed Field Pinch confinement of fusion plasmas. The present DNBI, built by…
We have demonstrated efficient intersubband electroabsorption in InGaAs/InAlGaAs/InAlAs step quantum wells grown by metal-organic vapor phase epitaxy (MOVPE). An absorption modulation of 6 dB at $\lambda=6.0 \mu$m due to Stark shift of the…
The Stark effect provides a powerful method to shift the spectra of molecules, atoms and electronic transitions in general, becoming one of the simplest and most straightforward way to tune the frequency of quantum emitters by means of a…
We report results on a model of two coupled oscillators that undergo periodic parametric modulations with a phase difference $\theta$. Being to a large extent analytically solvable, the model reveals a rich $\theta$ dependence of the…
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in…
We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In…
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract…