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相关论文: Coulomb Blockade Ratchet

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We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded…

强关联电子 · 物理学 2016-02-17 R. Hevroni , V. Shelukhin , M. Karpovski , M. Goldstein , E. Sela , Hadas Shtrikman , A. Palevski

Charge and spin density waves are highly correlated electron systems that can transport an electric current. A model is discussed in which a field E induces the creation, by quantum tunneling, of pairs of oppositely charged solitons and…

超导电性 · 物理学 2012-08-27 John H Miller,

Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that…

介观与纳米尺度物理 · 物理学 2009-11-07 D. Fedorets , L. Y. Gorelik , R. I. Shekhter , M. Jonson

Systems of quantum dots (QD) connected to leads exhibit periodic conductance peaks as a function of gate voltage arising from the Coulomb blockade effect \cite{review1,review2,review3}. Much effort goes into minimizing the size of QDs and…

介观与纳米尺度物理 · 物理学 2009-07-29 L. Bitton , R. Berkovits , A. Frydman

Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the…

介观与纳米尺度物理 · 物理学 2013-01-10 Chiara Stevanato , Martin Leijnse , Karsten Flensberg , Jens Paaske

We study transport through two Luttinger liquids (one-dimensional electrons interacting through a Coulomb repulsion in a metal) coupled together at {\it two} points. External voltage biases are incorporated through boundary conditions. We…

强关联电子 · 物理学 2009-10-31 P. Durganandini , Sumathi Rao

Low-order quantum resonances manifested by directed currents have been realized with cold atoms. Here we show that by increasing the strength of an experimentally achievable delta-kicking ratchet potential, quantum resonances of a very high…

量子物理 · 物理学 2009-11-13 Anatole Kenfack , Jiangbin Gong , Arjendu K. Pattanayak

A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb…

介观与纳米尺度物理 · 物理学 2007-05-23 Boris Grbic , Renaud Leturcq , Klaus Ensslin , Dirk Reuter , Andreas D. Wieck

The role of the discontinuity of the exchange-correlation potential of density functional theory is studied in the context of electron transport and shown to be intimately related to Coulomb blockade. By following the time evolution of an…

介观与纳米尺度物理 · 物理学 2010-06-08 S. Kurth , G. Stefanucci , E. Khosravi , C. Verdozzi , E. K. U. Gross

We report measurements of photon-assisted transport and noise in a tunnel junction in the regime of dynamical Coulomb blockade. We have measured both dc non-linear transport and low frequency noise in the presence of an ac excitation at…

介观与纳米尺度物理 · 物理学 2019-07-17 Samuel Houle , Karl Thibault , Édouard Pinsolle , Christian Lupien , Bertrand Reulet

We investigate transient dynamic response of an Anderson impurity quantum dot to a family of ramp-up driving voltage applied to the single coupling lead. Transient current is calculated based on a hierarchical equations of motion formalism…

介观与纳米尺度物理 · 物理学 2009-11-13 Xiao Zheng , Jinshuang Jin , YiJing Yan

We revisit the Coulomb blockade of the tunnel junction with conductance much smaller than $e^2/\hbar$. We study the junction with capacitance $C$, embedded in an Ohmic electromagnetic environment modelled by a series resistance $R$ which…

介观与纳米尺度物理 · 物理学 2022-05-11 A. Mošková , M. Moško

We analyze electron transport through relatively short coherent conductors in the presence of Coulomb interaction. We evaluate the current-voltage characteristics of such conductors taking into account the effect of an external environment.…

介观与纳米尺度物理 · 物理学 2007-05-23 A. D. Zaikin , D. S. Golubev

The purpose of this article is to present an accurate way, based on a physical description, to simulate Coulomb blockade devices. The method underlying the simulations depends only on fundamental parameters of the system and does not…

介观与纳米尺度物理 · 物理学 2007-05-23 Johann Sée , Philippe Dollfus , Sylvie Galdin , Patrice Hesto

We calculate the current-voltage characteristic of a homogeneously strained metallic carbon nanotube adsorbed on a substrate. The strain generates a gap in the energy spectrum leading to a reduction of the current. In the elastic regime,…

介观与纳米尺度物理 · 物理学 2013-05-29 Juergen Dietel , Hagen Kleinert

We study the thermopower of a quantum dot weakly coupled to two reservoirs by tunnel junctions. At low temperatures the transport through the dot is suppressed by charging effects (Coulomb blockade). As a result the thermopower shows an…

介观与纳米尺度物理 · 物理学 2009-11-07 M. Turek , K. A. Matveev

We study strong tunneling (i.e. transmission $h/e^2R_T \gg 1$) in the single-electron box with many transverse modes at zero temperature. We develop a new renormalization group method which includes all charge states and requires no initial…

介观与纳米尺度物理 · 物理学 2009-10-31 Jürgen König , Herbert Schoeller

The quantum transport of electrons in an artificial atom, such as a quantum dot (QD), is governed by the Coulomb blockade (CB) effects, revealing the ground-state charge configuration of the electronic system under interplays of the on-site…

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently…

介观与纳米尺度物理 · 物理学 2014-05-02 S. A. Fedorov , A. E. Korolkov , N. M. Chtchelkatchev , O. G. Udalov , I. S. Beloborodov

A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…

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