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相关论文: Frequency scaling of photo-induced tunneling

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Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…

强关联电子 · 物理学 2007-10-30 Shan-Wen Tsai , D. L. Maslov , L. I. Glazman

It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…

超导电性 · 物理学 2009-04-07 K. Yu. Arutyunov , T. T. Hongisto , D. Y. Vodolazov

The conductance curves of point-contact tunnel junctions between Ag and $\rm Ba_{1-x}K_xBiO_3$ ($x\simeq 0.4$) reveal a BCS behavior with low leakage current at zero voltage and some broadening of the superconducting-gap structure. In the…

超导电性 · 物理学 2017-04-04 P. Samuely , N. L. Bobrov , A. G. M. Jansen , P. Wyder , S. N. Barilo , S. V. Shiryaev

We observe in state-of-the-art GaAs based 2D electron systems microwave induced photo-current and photo-voltage oscillations around zero as a function of the applied magnetic field. The photo-signals pass zero whenever the microwave…

介观与纳米尺度物理 · 物理学 2009-11-13 S. I. Dorozhkin , I. V. Pechenezhskiy , L. N. Pfeiffer , K. W. West , V. Umansky , K. von Klitzing , J. H. Smet

We have investigated the mechanism at the origin of the infra-red radiation emitted by a biased tunnel junction by detecting photons at frequencies $\nu<eV/h$. To address this regime, the bias voltage $V$ exceeds one volt and the potential…

介观与纳米尺度物理 · 物理学 2017-11-06 Pierre Février , Julien Gabelli

A local interaction between photons can be engineered by coupling a nonlinear system to a transmission line. The required high impedance transmission line can be conveniently formed from a chain of Josephson junctions. The nonlinearity is…

介观与纳米尺度物理 · 物理学 2015-10-14 Li-Jing Jin , Manuel Houzet , Julia S. Meyer , Harold U. Baranger , Frank W. J. Hekking

In this work, using the time-dependent density functional theory, we address the electron tunneling triggered by short (single-cycle and several-cycle) optical pulses in narrow metallic gaps under conditions relevant for actual experiments.…

We study how tunneling through a potential barrier $V(x)$ can be enhanced by an additional harmonically oscillating electric field ${\mathfrak E}(t)={\mathfrak E}_0\cos(\omega t)$. To this end, we transform into the Kramers-Henneberger…

量子物理 · 物理学 2025-02-05 Daniil Ryndyk , Christian Kohlfürst , Friedemann Queisser , Ralf Schützhold

We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-parabolic energy dispersion, band anisotropy, quasi-time…

介观与纳米尺度物理 · 物理学 2023-03-21 Yi Luo , Yee Sin Ang , L. K. Ang

A tight-binding model together with a novel statistical method are used to investigate the relation between the sequence-dependent electric transport properties and the sequences of protein-coding regions of complete genomes. A correlation…

生物物理 · 物理学 2009-11-11 C. T. Shih

Some features of the field induced phase transition accompanied by the vacuum creation of an electron-positron plasma (EPP) in strong time-dependent electric fields have been discussed in the work [1] in the domain of the tunneling…

等离子体物理 · 物理学 2017-03-30 A. D. Panferov , S. A. Smolyansky , A. I. Titov , B. Kaempfer , A. Otto , D. B. Blaschke , L. Juchnowski

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…

介观与纳米尺度物理 · 物理学 2007-05-23 A. A. Shashkin , V. T. Dolgopolov , E. V. Deviatov , B. Irmer , A. G. C. Haubrich , J. P. Kotthaus , M. Bichler , W. Wegscheider

We calculate the tunneling current for a bilayer quantum Hall system in the interlayer incoherent regime. In order to capture the strong correlation effects we model the layers as two Wigner crystals coupled through interlayer Coulomb…

介观与纳米尺度物理 · 物理学 2009-11-10 F. D. Klironomos , A. T. Dorsey

We study the fractionalization of an electron tunneling into a strongly interacting electronic one-dimensional ring. As a complement to transport measurements in quantum wires connected to leads, we propose non-invasive measures involving…

强关联电子 · 物理学 2013-03-18 Wade DeGottardi , Siddhartha Lal , Smitha Vishveshwara

We report measurements of the low frequency current fluctuations of a tunnel junction placed at very low temperature biased by a time-dependent voltage $V(t)=V(1+\cos 2\pi\nu t)$. We observe that the excess noise generated by the ac…

介观与纳米尺度物理 · 物理学 2015-06-15 Gabriel Gasse , Lafe Spietz , Christian Lupien , Bertrand Reulet

We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source.…

介观与纳米尺度物理 · 物理学 2009-10-31 X. H. Wang , K. A. Chao

Quantum tunneling from a thin wire or a thin film through a static potential barrier in a zero magnetic field is studied. The wire or the film should satisfy a condition of transverse quantization of levels and be inhomogeneous. Depending…

量子物理 · 物理学 2008-06-11 B. Ivlev

We present a microscopic model for calculating the AC conductivity of a finite length line junction made up of two counter or co-propagating single mode quantum Hall edges with possibly different filling fractions. The effect of…

介观与纳米尺度物理 · 物理学 2015-05-13 Amit Agarwal , Diptiman Sen

We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of…

介观与纳米尺度物理 · 物理学 2009-10-31 F. Hohls , U. Zeitler , R. J. Haug , K. Pierz

We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…

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