相关论文: Sn delta-doping in GaAs
We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $\mu…
Measurements of the Hall effect, thermoelectric power, magnetic susceptibility and upper and lower critical fields were performed on single crystals of SrFe(2-x)Ni(x)As2, an FeAs-based superconducting system that exhibits a reduced…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si…
We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was…
We study magnetotransport properties of the electron-doped superconductor Pr$_{2-x}$Ce$_x$CuO$_{4\pm\delta}$ with $x$ = 0.14 in magnetic fields up to 92~T, and observe Shubnikov de-Haas magnetic quantum oscillations. The oscillations…
Efforts to understand the microscopic origin of superconductivity in the cuprates are dependent on knowledge of the normal state. The Hall number in the low temperature, high field limit $n_{\rm H}(0)$ has a particular significance because…
We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…
We study magnetotransport in a rare earth doped topological insulator, Sm0.1Sb1.9Te3 single crystals, under magnetic fields up to 14 T. It is found that that the crystals exhibit Shubnikov de Haas oscillations in their magneto-transport…
We study the diamagnetism induced by thermal fluctuations above the superconducting transition of the iron pnictide Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ with different doping levels. The measurements are performed with magnetic fields up to 7 T…
Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional…
We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have…
Alloying and doping are crucial for enhancing the electronic and optical properties of semiconductors while simultaneously introducing disorder. This report explores the effects of alloying and Si (0.5 at.\%) doping on…
Co-based shandite Co$_3$Sn$_2$S$_2$ is a representative example of magnetic Weyl semimetals showing rich transport phenomena. We thoroughly investigate magnetic and transport properties of hole-doped shandites Co$_3$In$_x$Sn$_{2-x}$S$_2$ by…
We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with…
We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been…
High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher…