相关论文: A simple solid-on-solid model of epitaxial thin fi…
The formation of three-dimensional structures during the epitaxial growth of films is associated to the reflection of diffusing particles in descending terraces due to the presence of the so-called Ehrlich-Schwoebel (ES) barrier. We…
The random deposition model must be enriched to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to…
In this paper we present a generalization of a simple solid-on-solid epitaxial model of thin films growth, when surface morphology anisotropy is provoked by anisotropy in model control parameters: binding energy and/or diffusion barrier.…
In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also…
In this paper a simple (2+1) solid-on-solid model of the epitaxial films growth based on random deposition followed by breaking particle-particle lateral bonds and particles surface diffusion is introduced. The influence of the critical…
We investigate the influence of step edge diffusion (SED) and desorption on Molecular Beam Epitaxy (MBE) using kinetic Monte-Carlo simulations of the solid-on-solid (SOS) model. Based on these investigations we propose two strategies to…
The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using a…
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…
The subtle balance of electronic correlations, crystal field splitting and spin--orbit coupling in layered Ir$^{4+}$ oxides can give rise to novel electronic and magnetic phases. Experimental progress in this field relies on the synthesis…
A discrete solid-on-solid model of epitaxial growth is introduced which, in a simple manner, takes into account the effect of an Ehrlich-Schwoebel barrier at step edges as well as the local relaxation of incoming particles. Furthermore a…
We demonstrate the possibility of growing textured La$_{2/3}$Sr$_{1/3}$MnO$_3$ (LSMO) thin films on silicon substrates with magneto-optical and optical properties comparable to high-quality epitaxial layers grown on bulk SrTiO$_3$ (STO).…
The paper presents results from kinetic Monte Carlo simulations of kinetic surface roughening using an important and experimentally relevant model of epitaxial growth -- the solid-on-solid model with Arrhenius dynamics. A restriction on…
Structural moir\'e superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moir\'e heterostructures are based on van der Waals (vdW) materials,…
In this paper we would like give a short review of our recent works and current investigation in modeling of solid film surfaces growth based on computer Monte Carlo simulations. We also discuss effect of some simplification in growth rules…
Gaining insight into the characteristics of epitaxial complex oxide films is essential to control the behavior of devices and catalytic processes. It is known that substrate induced strain, doping, and layer growth can affect the electronic…
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control…
In the present contribution we review basic mathematical results for three physical systems involving self-organising solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting,…
Immense interests in thin-film fabrication for industrial applications have driven both theoretical and computational aspects of modeling its growth with an aim to design and control film's surface morphology. Oftentimes, smooth surface is…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…