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相关论文: Magic Islands and Barriers to Attachment: A Si/Si(…

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Deposition/removal of metal atoms on the hex reconstructed (100) surface of Au, Pt and Ir should present intriguing aspects, since a new island implies hex -> square deconstruction of the substrate, and a new crater the square -> hex…

材料科学 · 物理学 2009-10-31 D. Passerone , F. Ercolessi , E. Tosatti

Lattice mismatch of Cu on Ag(111) produces fast diffusion for special "magic sizes" of islands. A size- and shape-dependent reptation mechanism is responsible for low diffusion barriers. Initiating the reptation mechanism requires a…

材料科学 · 物理学 2010-08-02 Henry H. Wu , A. W. Signor , Dallas R. Trinkle

We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To…

材料科学 · 物理学 2015-06-25 M. O. Jahma , M. Rusanen , A. Karim , I. T. Koponen , T. Ala-Nissila , T. S. Rahman

The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that small island mobility affects both the scaling and morphology of islands during growth. Three microscopic models are…

材料科学 · 物理学 2009-10-28 I. Furman , O. Biham

Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of…

凝聚态物理 · 物理学 2009-10-22 K. Sekar , G. Kuri , P. V. Satyam , B. Sundaravel , D. P. Mahapatra , B. N. Dev

In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal…

We study the energetics of island formation in Stranski-Krastanow growth within a parameter-free approach. It is shown that an optimum island size exists for a given coverage and island density if changes in the wetting layer morphology…

材料科学 · 物理学 2009-10-31 L. G. Wang , P. Kratzer , M. Scheffler , N. Moll

The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate…

材料科学 · 物理学 2012-10-08 J. K. Dash , T. Bagarti , A. Rath , R. R. Juluri , P. V. Satyam

Current sheets thinner than the ion inertial length are unstable to the tearing instability and will develop magnetic islands that grow due to magnetic reconnection. We investigate whether the growth of magnetic islands in a current sheet…

太阳与恒星天体物理 · 物理学 2015-06-05 K. M. Schoeffler , J. F. Drake , M. Swisdak

A bimodal size distribution of two dimensional islands is inferred during interface formation in heteroepitaxial growth of Bismuth Ferrite on (001) oriented SrTiO3 by sputter deposition. Features observed by in-situ x-ray scattering are…

材料科学 · 物理学 2014-02-24 P. V. Chinta , R. L. Headrick

A solid-on-solid model is generalized to study the formation of Ge pyramid islands bounded by (105) facets on Si(100) substrates in two dimensions. Each atomic column is not only characterized by the local surface height but also by two…

介观与纳米尺度物理 · 物理学 2015-05-14 Chi-Hang Lam

Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $\Theta$ in the submonolayer aggregation regime of…

凝聚态物理 · 物理学 2009-10-22 C. Ratsch , A. Zangwill , P. Šmilauer

We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly…

介观与纳米尺度物理 · 物理学 2011-10-25 L. Persichetti , R. Menditto , A. Sgarlata , M. Fanfoni , A. Balzarotti

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation free island formation, and ripening. The derived phase diagram provides a detailed…

统计力学 · 物理学 2009-10-30 Istvan Daruka , Albert-Laszlo Barabasi

Understanding surface dynamics during epitaxial film growth is key to growing high quality materials with controllable properties. X-ray photon correlation spectroscopy (XPCS) using coherent x-rays opens new opportunities for in situ…

The observed height distribution of clusters obtained in strained epitaxy has been often interpreted in terms of electronic effects. We show that some aspects can be explained classically by the interplay of strain and edge energies. We…

材料科学 · 物理学 2015-06-25 J. E. Prieto , I. Markov

We report simulations of submonolayer epitaxial growth using a continuum phase field model. The island density and the island size distribution both show scaling behavior. When the capillary length is small, the island size distribution is…

介观与纳米尺度物理 · 物理学 2013-05-29 Fan Ming , Andrew Zangwill

The Stranski-Krastanov growth kinetics of undislocated (coherent) 3-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to…

统计力学 · 物理学 2009-10-31 Hari M. Koduvely , Andrew Zangwill

The steering effect on the growth of islands is investigated by combining molecular dynamics (MD) and kinetic Monte Carlo (KMC) simulations. Dynamics of depositing atoms and kinetics of atoms on a substrate are realized by MD and KMC,…

材料科学 · 物理学 2009-11-07 Jikeun Seo , S. -M. Kwon , H. -Y. Kim , J. -S. Kim

Using kinetic Monte Carlo simulations, we develop a framework to relate morphological properties and microscopic dynamics during island growth, coalescence, and initial formation of continuous heteroepitaxial films. The average island width…

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