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相关论文: Magnetooptical sum rules close to the Mott transit…

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The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

We consider extended Hubbard models with repulsive interactions on a Honeycomb lattice and the transitions from the semi-metal phase at half-filling to Mott insulating phases. In particular, due to the frustrating nature of the…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Raghu , Xiao-Liang Qi , C. Honerkamp , Shou-Cheng Zhang

We study the optical response of a strongly correlated electron system near the metal-insulator transition using a mapping to the sine-Gordon model. With semiclassical quantization, the spectral weight is distributed between a Drude peak…

强关联电子 · 物理学 2009-11-07 D. N. Aristov , Vadim V. Cheianov , A. Luther

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

In an attempt to understand quantitatively the remarkable discoveries of metal-insulator transitions in two-dimensional systems, we generalize Mott's variable range hopping theory to the situation with strong Coulomb interaction. In our…

强关联电子 · 物理学 2007-05-23 Wenjun Zheng , Yue Yu

We study the effect of carrier doping to the Mott insulator on the Penrose tiling, aiming at clarifying the interplay between quasiperiodicity and strong electron correlations. We numerically solve the Hubbard model on the Penrose-tiling…

强关联电子 · 物理学 2022-10-06 Shiro Sakai , Nayuta Takemori

Sum rules have played an important role in the development of many branches of physics since the earliest days of quantum mechanics. We present examples of one-dimensional quantum mechanical sum rules and apply them in two familiar systems,…

量子物理 · 物理学 2009-11-13 M. Belloni , R. W. Robinett

The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase…

强关联电子 · 物理学 2009-11-07 L. B. Ioffe , A. J. Millis

The theory that the change of the electronic kinetic energy in a direction perpendicular to the CuO-planes in high-temperature superconductors is a substantial fraction of the condensation energy is examined. It is argued that the…

超导电性 · 物理学 2009-10-31 Sudip Chakravarty , Hae-Young Kee , Elihu Abrahams

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant…

强关联电子 · 物理学 2018-11-26 Joseph Maciejko , Xiao-Liang Qi , H. Dennis Drew , Shou-Cheng Zhang

We have generalized the dynamical mean-field theory to study the doping dependence of the crossover from antiferromagnetic to short-range order modelled by an incommensurate spin density wave in the Hubbard model. The local selfenergy which…

强关联电子 · 物理学 2009-10-31 M. Fleck , A. I. Lichtenstein , A. M. Oles , L. Hedin , V. I. Anisimov

The competition between antiferromagnetism and hole motion in two-dimensional Mott insulators lies at the heart of a doping-dependent transition from an anomalous metal to a conventional Fermi liquid. Condensed matter experiments suggest…

Many Mott systems feature a first-order metal-insulator transition at finite temperatures, with an associated phase coexistence region displaying inhomogeneities and local phase separation. Here one typically finds "bubbles" or domains of…

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…

强关联电子 · 物理学 2013-05-28 Florian C. Sabou , Natalie Bodington , J. B. Marston

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

I review some of the results on the Mott transition in one dimensional systems. In particular I discuss the phase diagram and critical properties of both Mott transitions at fixed filling and upon doping, as well as the dc and ac…

凝聚态物理 · 物理学 2009-10-28 T. Giamarchi

We discuss the problem of a possible "violation" of the optical sum rule in the normal (non superconducting) state of strongly correlated electronic systems, using our recently proposed DMFT+Sigma approach, applied to two typical models:…

强关联电子 · 物理学 2009-11-13 E. Z. Kuchinskii , N. A. Kuleeva , I. A. Nekrasov , M. V. Sadovskii

We investigate the nonlinear optical susceptibilities of Mott insulators with the dynamical mean field approximation. The two-photon absorption (TPA) and the third-harmonic generation (THG) spectra are calculated, and the classification by…

强关联电子 · 物理学 2009-11-13 Takanobu Jujo

We elaborate on a recently proposed extension of the Gerasimov-Drell-Hearn (GDH) sum rule which is achieved by taking derivatives with respect to the anomalous magnetic moment. The new sum rule features a {\it linear} relation between the…

高能物理 - 唯象学 · 物理学 2014-11-18 B. R. Holstein , V. Pascalutsa , M. Vanderhaeghen