相关论文: Phonon drag thermopower and weak localization
We present thermopower measurements on a high electron mobility two-dimensional electron gas (2DEG) in a thin suspended membrane.We show that the small dimension of the membrane substantially reduces the thermal conductivity compared to…
We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the…
In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange…
Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although thermal conductivity of 2D materials has been extensively…
The thermoelectric properties of single- and polycrystalline FeGa3 are systematically investigated over a wide temperature range. At low temperatures, below 20 K, previously not known pronounced peaks in the thermal conductivity (400-800 W…
We present numerical simulations of the acoustic-phonon-limited mobility, $\mu_{ac}$, and phonon-drag thermopower, $S^{g}$, in two-dimensional electron gases confined in MgZnO/ZnO heterostructures. The calculations are based on the…
We carry out a calculation of the phonon-drag contribution $S_g$ to the thermoelectric power of bulk semiconductors and quantum well structures for the first time using the balance equation transport theory extended to the weakly nonuniform…
An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…
Departures in phonon heat conduction from diffusion have been extensively observed in nanostructures through their thermal conductivity reduction and largely explained with classical size effects neglecting phonon's wave nature. Here, we…
We explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We…
Phonon drag may be harnessed for thermoelectric generators and devices. Here, we demonstrate the geometric control of the phonon-drag contribution to the thermopower. In nanometer-thin electrically conducting $\beta$-Ga$_2$O$_3$ films…
The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T…
Experiments studying phonon mediated drag in the double layer two dimensional electron gas system are reported. Detailed measurements of the dependence of drag on temperature, layer spacing, density ratio, and matched density are discussed.…
We study the low-temperature thermopower of micron sized, free-standing membranes containing a two-dimensional electron system. Suspended membranes of 320 nm thickness including a high electron mobility structure in Hall bar geometry of 34…
In most materials, transport can be described by the motion of distinct species of quasiparticles, such as electrons and phonons. Strong interactions between quasiparticles, however, can lead to collective behaviour, including the…
Large reductions of the superconducting transition temperature $T_{c}$ and the accompanying loss of the thermal electrical resistivity (electron-phonon interaction) due to radiation damage have been observed for several A15 compounds,…
Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
A thorough understanding of electrical and thermal transport properties of group-III nitride semiconductors is essential for their electronic and thermoelectric applications. Despite extensive previous studies, these transport properties…