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The spin configuration induced by single holes and hole pairs doped into stoichiometric, antiferromagnetic cuprates is considered. Unrestricted Hartree-Fock calculations for the three-band Hubbard model are employed to study spin-polaron…

超导电性 · 物理学 2009-10-26 A. Kesting , C. Timm

We investigate a microscopic model for strongly correlated electrons with both on-site and nearest neighbor Coulomb repulsion on a 2D square lattice. This exhibits a state in which electrons undergo a ``somersault'' in their internal…

超导电性 · 物理学 2009-10-31 Mona Berciu , Sajeev John

Momentum resolved inelastic resonant x-ray scattering is used to map the evolution of charge excitations over a large range of energies, momenta and doping levels in the electron doped Mott insulator class Nd$_{2-x}$Ce$_x$CuO$_4$. As the…

强关联电子 · 物理学 2008-12-11 Y. W. Li , D. Qian , L. Wray , D. Hsieh , Y. Kaga , T. Sasagawa , H. Takagi , R. S. Markiewicz , A. Bansil , H. Eisaki , S. Uchida , M. Z. Hasan

We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…

强关联电子 · 物理学 2009-11-11 Wei-Cheng Lee , A. H. MacDonald

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

Transport and local spectroscopy measurements have revealed that monolayers of tungsten ditelluride ($1T'$-WTe$_2$) display a quantum spin Hall effect and an excitonic gap at neutrality, besides becoming superconducting at low electron…

We theoretically investigate the heterostructure between a ferrimagnetic Mott insulator and a time-reversal invariant topological band insulator on the two-dimensional Lieb lattice with periodic boundary conditions. Our Hartree-Fock and…

介观与纳米尺度物理 · 物理学 2025-11-11 Rahul Ghosh , Subhajyoti Pal , Kush Saha , Anamitra Mukherjee

Within the framework of the fermion-spin theory, the charge transport in the doped Mott insulators on a honeycomb lattice is studied by taking into account the pseudogap effect. It is shown that the conductivity spectrum in the low-doped…

超导电性 · 物理学 2016-05-04 Xixiao Ma , Yu Lan , Ling Qin , Shiping Feng

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…

强关联电子 · 物理学 2023-10-19 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

We study the effects of doping a Mott insulator on the honeycomb lattice where spins interact via direction dependent Kitaev couplings J_K, and weak antiferromagnetic Heisenberg couplings J. This model is known to have a spin liquid ground…

强关联电子 · 物理学 2012-08-30 Yi-Zhuang You , Itamar Kimchi , Ashvin Vishwanath

The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…

We have measured the doping and temperature dependence of lattice vibrations and magnetic excitations in the prototypical doped spin-orbit Mott insulator Sr$_{2-x}$La$_x$IrO$_4$ (x=0, 0.015, and 0.10). Our findings show that the…

强关联电子 · 物理学 2017-09-27 H. Gretarsson , J. Sauceda , N. H. Sung , M. Höppner , M. Minola , B. J. Kim , B. Keimer , M. Le Tacon

The motion of doped electrons or holes in an antiferromagnetic lattice with strong on-site Coulomb interactions touches one of the most fundamental open problems in contemporary condensed matter physics. The doped charge may strongly couple…

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…

We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion…

介观与纳米尺度物理 · 物理学 2007-05-23 John Schliemann

We study a two-dimensional single band Hubbard Hamiltonian with antisymmetric spin-orbit coupling. We argue that this is the minimal model to understand the electronic properties of locally non-centrosymmetric transition-metal (TM) oxides…

强关联电子 · 物理学 2021-04-30 Mehdi Biderang , Alireza Akbari , Jesko Sirker

We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the $R_{1-x}$Ca$_x$VO$_3$ perovskites,…

强关联电子 · 物理学 2018-04-09 Adolfo Avella , Andrzej M. Oleś , Peter Horsch

Iridates such as Sr$_2$IrO$_4$ are of considerable interest owing to the formation of the Mott insulating state driven by a large spin-orbit coupling. However, in contrast to the expectation from the Nagaoka Theorem that a single doped hole…

强关联电子 · 物理学 2018-06-13 Sayantika Bhowal , Jamshid Moradi Kurdestany , Sashi Satpathy

We investigate the effect of hole doping on the strong-coupling Hubbard model at half-filling in spatial dimensions $D\ge 1$. We start with an antiferromagnetic mean-field description of the insulating state, and show that doping creates…

凝聚态物理 · 物理学 2009-10-28 Junwu Gan , Dung-Hai Lee , Per Hedegard

The competition between antiferromagnetism and hole motion in two-dimensional Mott insulators lies at the heart of a doping-dependent transition from an anomalous metal to a conventional Fermi liquid. Condensed matter experiments suggest…

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