相关论文: Current-Induced Step Bending Instability on Vicina…
We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the…
We introduce a simple two region model where the diffusion constant in a small region around each step on a vicinal surface can differ from that found on the terraces. Steady state results for this model provide a physically suggestive…
We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces…
We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent {\gamma}, connecting the…
Coarse-grained modeling of dynamics on vicinal surfaces concentrates on the diffusion of adatoms on terraces with boundary conditions at sharp steps, as first studied by Burton, Cabrera and Frank (BCF). Recent electromigration experiments…
With a Si(001) vicinal surface in mind, we study step wandering instability on a vicinal surface with an anisotropic surface diffusion whose orientation dependence alternates on each consecutive terrace. In a conserved system step wandering…
We approach the old-standing problem of vicinal crystal surfaces destabilized by step-down and step step-up currents from a unified modelling viewpoint with focus on both the initial and the intermediate stages of the instability. We…
A discrete version of deposition-diffusion equations appropriate for description of step flow on a vicinal surface is analyzed for a two-dimensional grid of adsorption sites representing the stepped surface and explicitly incorporating…
We study the effect of a constant electrical field applied on vicinal surfaces such as the Si$(111)$ surface. An electrical field parallel to the steps induces a meandering instability with a nonzero phase shift. Using the…
On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$…
The classification of bunching of straight steps on vicinal crystal surfaces identifies two types according to the behavior of the minimal step-step distance in the bunch lmin with increasing the number of steps N in it. In the B1-type lmin…
The distinction between absolute and convective instabilities is well known in the context of hydrodynamics and plasma physics. In this Letter, we examine an epitaxial crystal growth model from this point of view and show that a…
Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…
We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This…
We propose a one-dimensional model based on the Burton-Cabrera-Frank equations to describe the electromigration-induced step bunching instability on vicinal surfaces. The step drift resulting from atomic evaporation and/or deposition is…
We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three…
We formulate a new (1+1)D step model of potentially unstable vicinal growth that we call "C+ - C-" model and study the step bunching process in it. The basic assumption is that the equilibrium adatom concentrations on both sides of the step…
A sublimating vicinal crystal surface can undergo a step bunching instability when the attachment-detachment kinetics is asymmetric, in the sense of a normal Ehrlich-Schwoebel effect. Here we investigate this instability in a model that…
The morphology of a growing crystal surface is studied in the case of an unstable two-dimensional step flow. Competition between bunching and meandering of steps leads to a variety of patterns characterized by their respective instability…
We study the onset and development of ledge instabilities during growth of vicinal metal surfaces using kinetic Monte Carlo simulations. We observe the formation of periodic patterns at [110] close packed step edges on surfaces vicinal to…