中文
相关论文

相关论文: Quantum Monte Carlo calculations for integer-doped…

200 篇论文

We investigate the Mott transition in infinite dimensions in the orbitally degenerate Hubbard model. We find that the qualitative features of the Mott transition found in the one band model are also present in the orbitally degenerate case.…

凝聚态物理 · 物理学 2015-06-25 Henrik Kajueter , Gabriel Kotliar

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of interlayer hopping t_perp and on-site…

强关联电子 · 物理学 2014-03-11 Robert Rüger , Luca F. Tocchio , Roser Valentí , Claudius Gros

We use the doped Fullerenes as an example of how realistic systems can be described by simple models. Starting from the band structure we set up a tight-binding model that describes the t_{1u} conduction band. Adding correlation terms we…

超导电性 · 物理学 2009-10-31 Erik Koch , Olle Gunnarsson

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

We consider the orbitally degenerate 3-band Hubbard model with on-site interactions which favor low spin and low orbital angular momentum using standard second order perturbation theory in the large Hubbard-U limit. At even integer filling…

强关联电子 · 物理学 2009-11-10 M. Granath , S. Ostlund

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

Ground state properties of multi-orbital Hubbard models are investigated by the auxiliary field quantum Monte Carlo method. A Monte Carlo technique generalized to the multi-orbital systems is introduced and examined in detail. The algorithm…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

We take advantage of recent improvements in the grand canonical Hybrid Monte Carlo algorithm, to perform a precision study of the single-particle gap in the hexagonal Hubbard model, with on-site electron-electron interactions. After…

强关联电子 · 物理学 2021-01-04 Johann Ostmeyer , Evan Berkowitz , Stefan Krieg , Timo A. Lähde , Thomas Luu , Carsten Urbach

To understand effects of orbital degeneracy on magnetism, in particular effects of Hund's rule coupling, we study the two-orbital Hubbard model on a square lattice by a variational Monte Carlo method. As a variational wave function, we…

强关联电子 · 物理学 2009-01-29 Katsunori Kubo

The analogue of a Mott-Hubbard transition is discussed, which appears at an incommensurate filling in a model of a two-dimensional plane, randomly tiled with CuO_4 `molecules', simulating the copper-oxide planes of high-T_c superconductors.…

强关联电子 · 物理学 2007-05-23 D. K. Sunko

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Diagrammatic Monte Carlo -- the technique for numerically exact summation of all Feynman diagrams to high orders -- offers a unique unbiased probe of continuous phase transitions. Being formulated directly in the thermodynamic limit, the…

强关联电子 · 物理学 2022-09-07 Connor Lenihan , Aaram J. Kim , Fedor Šimkovic IV. , Evgeny Kozik

Motivated by the unexplored complexity of the phase diagrams for multi-orbital Hubbard models, a three-band Hubbard model at integer fillings (N=4) with orbital degeneracy lifted partially by crystal field splitting is analyzed…

强关联电子 · 物理学 2014-12-04 Li Huang , Liang Du , Xi Dai

The Quantum Monte Carlo simulations of the ionic Hubbard model on a two-dimensional square lattice at half filling were performed. The method based on the direct-space, proposed by Suzuki and al., Hirsch and al., was used. Cycles of…

强关联电子 · 物理学 2010-02-02 Bernard Martinie

We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…

强关联电子 · 物理学 2011-04-06 G. Sordi , A. Amaricci , M. J. Rozenberg

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

An antiferromagnetic Hund coupling in multiorbital Hubbard systems induces orbital freezing and an associated superconducting instability, as well as unique composite orders in the case of an odd number of orbitals. While the rich phase…

强关联电子 · 物理学 2020-11-11 Changming Yue , Shintaro Hoshino , Philipp Werner

We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…

强关联电子 · 物理学 2009-11-07 S. Florens , A. Georges , G. Kotliar , O. Parcollet

Stability of a metallic state in the two-orbital Hubbard model at half-filling is investigated. We clarify how spin and orbital fluctuations are enhanced to stabilize the formation of quasi-particles by combining dynamical mean field theory…

强关联电子 · 物理学 2009-11-10 Akihisa Koga , Takuma Ohashi , Yoshiki Imai , Sei-ichiro Suga , Norio Kawakami