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Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…

介观与纳米尺度物理 · 物理学 2016-07-28 Ying Li , Jan Mol , Simon Benjamin , Andrew Briggs

The Josephson Effect provides a primary signature of single spin superconductivity (SSS), the as yet unobserved superconducting state which was proposed recently as a low temperature phase of half-metallic antiferromagnets. These materials…

超导电性 · 物理学 2009-10-31 Robert E. Rudd , Warren E. Pickett

We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…

介观与纳米尺度物理 · 物理学 2015-06-11 Nikita Simonian , Andreas Mayr , Konstantin K. Likharev

We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…

介观与纳米尺度物理 · 物理学 2007-05-23 D. M. Schröer , A. K. Hüttel , K. Eberl , S. Ludwig , M. N. Kiselev , B. L. Altshuler

Few-electron quantum dots are investigated in the regime of strong tunneling to the leads. Inelastic cotunneling is used to measure the two-electron singlet-triplet splitting above and below a magnetic field driven singlet-triplet…

介观与纳米尺度物理 · 物理学 2009-11-10 D. M. Zumbuhl , C. M. Marcus , M. P. Hanson , A. C. Gossard

Tunneling of electrons into a two-dimensional electron system is known to exhibit an anomaly at low bias, in which the tunneling conductance vanishes due to a many-body interaction effect. Recent experiments have measured this anomaly…

强关联电子 · 物理学 2018-07-02 Debanjan Chowdhury , Brian Skinner , Patrick A. Lee

We discuss inherent thermometry in a Superconductor - Normal metal - Superconductor tunnel junction. In this configuration, the energy selectivity of single-particle tunneling can provide a significant electron cooling, depending on the…

超导电性 · 物理学 2009-11-13 Hervé Courtois , Sukumar Rajauria , Philippe Gandit , Frank Hekking , Bernard Pannetier

We review our recent studies on the Kondo effect in the tunneling phenomena through quantum dot systems. Numerical methods to calculate reliable tunneling conductance are developed. In the first place, a case in which electrons of odd…

介观与纳米尺度物理 · 物理学 2009-11-07 Osamu Sakai , Wataru Izumida

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

介观与纳米尺度物理 · 物理学 2015-05-13 Binhui Hu , C. H. Yang

We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the…

介观与纳米尺度物理 · 物理学 2009-10-30 D. C. Ralph , C. T. Black , M. Tinkham

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

We investigate transport through a mononuclear transition-metal complex with strong tunnel coupling to two electrodes. The ground state of this molecule is a singlet while the first excited state is a triplet. We show that a modulation of…

强关联电子 · 物理学 2007-05-23 K. Kikoin , M. N. Kiselev , M. R. Wegewijs

The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…

介观与纳米尺度物理 · 物理学 2007-06-13 M. J. Calderon , Belita Koiller , S. Das Sarma

Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…

应用物理 · 物理学 2019-10-02 Nan Fang , Kosuke Nagashio

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…

介观与纳米尺度物理 · 物理学 2009-11-11 M. Hofheinz , X. Jehl , M. Sanquer , G. Molas , M. Vinet , S. Deleonibus

We investigate the properties of conduction electrons in single-walled armchair carbon nanotubes in the presence of mutually orthogonal electric and magnetic fields transverse to the tube's axis. We find that the fields give rise to an…

介观与纳米尺度物理 · 物理学 2015-05-14 Wade DeGottardi , Tzu-Chieh Wei , Victoria Fernandez , Smitha Vishveshwara

Tunneling of electrons through rotor-stator anthracene aldehyde molecular interfaces is studied with a combined ab initio and model approach. Molecular electronic structure calculated from first principles is utilized to model different…

化学物理 · 物理学 2016-05-27 Irina Petreska , Vladimir Ohanesjan , Ljupco Pejov , Ljupco Kocarev

We report on the electric measurements of an individual Au nanoparticle with an ultra-high contact resistance of about $10^{19} \Omega$. The high-impedance measurements have been carried out by counting the electrons that are transferred…

介观与纳米尺度物理 · 物理学 2008-03-12 An. Gruneis , M. J. Esplandiu , D. Garcia-Sanchez , A. Bachtold

We investigate theoretically the simultaneous tunneling of two electrons from a superconductor into a normal metal at low temperatures and voltages. Such an emission process is shown to be equivalent to the Andreev reflection of an incident…

介观与纳米尺度物理 · 物理学 2009-11-10 E. Prada , F. Sols
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