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We review the statics and dynamics of electric-field domains on doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a…

凝聚态物理 · 物理学 2007-05-23 L. L. Bonilla , M. Kindelan , M. Moscoso , A. Wacker

We examine how the current--voltage characteristics of a doped weakly coupled superlattice depends on temperature. The drift velocity of a discrete drift model of sequential tunneling in a doped GaAs/AlAs superlattice is calculated as a…

凝聚态物理 · 物理学 2009-11-07 David Sanchez , L. L. Bonilla , G. Platero

Self-sustained time-dependent current oscillations under dc voltage bias have been observed in recent experiments on n-doped semiconductor superlattices with sequential resonant tunneling. The current oscillations are caused by the motion…

凝聚态物理 · 物理学 2009-10-28 O. M. Bulashenko , M. J. Garcia , L. L. Bonilla

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence,…

凝聚态物理 · 物理学 2009-10-30 A. Wacker , M. Moscoso , M. Kindelan , L. L. Bonilla

The complex impedance of a semiconductor superlattice biased into the regime of negative differential conductivity and driven by an additional GHz ac voltage is computed. From a simulation of the nonlinear spatio-temporal dynamics of…

凝聚态物理 · 物理学 2007-05-23 A. -K. Jappsen , A. Amann , A. Wacker , E. Schomburg , E. Schöll

We report a GaAs/AlAs superlattice parametric oscillator. It was pumped by a microwave field (power few mW) and produced 3rd harmonic radiation (frequency near 300 GHz). The nonlinearity of the active superlattice was due to Bragg…

介观与纳米尺度物理 · 物理学 2009-11-11 K. F. Renk , B. I. Stahl , A. Rogl , T. Janzen , D. G. Pavel'ev , Yu. I. Koshurinov , V. Ustinov , A. Zhukov

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling…

Self-sustained current oscillations in weakly-coupled superlattices are studied by means of a self-consistent microscopic model of sequential tunneling including boundary conditions naturally. Well-to-well hopping and recycling of charge…

凝聚态物理 · 物理学 2009-10-31 David Sanchez , Miguel Moscoso , Luis L. Bonilla , Gloria Platero , Ramon Aguado

A model for charge transport in undoped, photo-excited semiconductor superlattices, which includes the dependence of the electron-hole recombination on the electric field and on the photo-excitation intensity through the field-dependent…

介观与纳米尺度物理 · 物理学 2015-05-14 J. I. Arana , L. L. Bonilla , H. T. Grahn

Tunable magnetic interactions in high-mobility nonmagnetic semiconductor heterostructures are centrally important to spin-based quantum technologies. Conventionally, this requires incorporation of "magnetic impurities" within the…

介观与纳米尺度物理 · 物理学 2007-05-23 Christoph Siegert , Arindam Ghosh , Michael Pepper , Ian Farrer , David A. Ritchie

We explore the design parameter space of short (5--25 period), n-doped, Ga/(Al,Ga)As semiconductor superlattices (SSLs) in the sequential resonant tunneling regime. We consider SSLs at cool (77K) and warm (295K) temperatures, simulating the…

介观与纳米尺度物理 · 物理学 2018-05-09 Jonathan Essen , Miguel Ruiz-Garcia , Ian Jenkins , Manuel Carretero , Luis Bonilla , Björn Birnir

Electrons performing Bloch oscillations in an energy band of a dc-biased superlattice in the presence of weak dissipation can potentially generate THz fields at room temperature. The realization of such Bloch oscillator is a long-standing…

介观与纳米尺度物理 · 物理学 2009-10-08 Timo Hyart , Natalia V. Alexeeva , Jussi Mattas , Kirill N. Alekseev

Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices.…

介观与纳米尺度物理 · 物理学 2021-08-27 E. Mompó , M. Carretero , L. L. Bonilla

We present a concept of terahertz oscillations in superlattices that are generated under conditions apparently different from standard Bloch oscillations. These oscillations are induced when crossed magnetic and electric fields are applied…

其他凝聚态物理 · 物理学 2009-11-11 M. Orlita , R. Grill , L. Smrcka , M. Zvara

A numerical study of domain wall relocation during voltage switching with different ramping times is presented for weakly coupled, doped semiconductor superlattices exhibiting multistable domain formation in the first plateau of their…

介观与纳米尺度物理 · 物理学 2007-05-23 L. L. Bonilla , R. Escobedo , G. Dell'Acqua

We study theoretically the dynamical rectification of a terahertz AC electric field, ie. the DC current and voltage response to the incident radiation, in strongly coupled semiconductor superlattices. We address the problem of stability…

介观与纳米尺度物理 · 物理学 2015-06-04 Jukka Isohätälä , Kirill N. Alekseev

A semiconductor superlattice with hot electron injection into the miniband is considered. The injection changes the stationary distribution function and results in a qualitative change of the frequency behaviour of the differential…

介观与纳米尺度物理 · 物理学 2009-11-07 D. A. Ryndyk , N. V. Demarina , J. Keller , E. Schomburg

In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed…

介观与纳米尺度物理 · 物理学 2024-03-12 Daisy Q. Wang , Zeb Krix , Oleg P. Sushkov , Ian Farrer , David A. Ritchie , Alexander R. Hamilton , Oleh Klochan

The ac response of self-sustained current oscillations (SSCOs) in GaAs/AlAs superlattices (SLs) is derived based on the deformation of a limit cycle under an external ac driving force. Frequency locking into an integer fraction of the ac…

介观与纳米尺度物理 · 物理学 2009-11-10 Z. Z. Sun , H. T. He , J. N. Wang , Shi-dong Wang , X. R. Wang

Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage…

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