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Mechanisms of Mott transitions and dx2-y2-wave superconductivity (SC) are studied in the half-filled-band Hubbard model on square lattices with a diagonal hopping term (t'), using an optimization (or correlated) variational Monte Carlo…

强关联电子 · 物理学 2009-11-11 Hisatoshi Yokoyama , Masao Ogata , Yukio Tanaka

An understanding of the anomalous charge dynamics in the high-Tc cuprates is obtained based on a model study of doped Mott insulators. The high-temperature optical conductivity is found to generally have a two-component structure: a Drude…

强关联电子 · 物理学 2007-09-16 Zheng-Cheng Gu , Zheng-Yu Weng

Using a first-principles classical many-body simulation of a Hall bar, we study the necessary conditions for the formation of the Hall potential: (i) Ohmic contacts with metallic reservoirs, (ii) electron-electron interactions, and (iii)…

介观与纳米尺度物理 · 物理学 2010-05-10 Tobias Kramer , Viktor Krueckl , Eric J. Heller , Robert E. Parrott

A topological frequency converter represents a dynamical counterpart of the integer quantum Hall effect, where a two-level system enacts a quantized time-averaged power transfer between two driving modes of incommensurate frequency. Here,…

介观与纳米尺度物理 · 物理学 2024-09-16 Florian Koch , Jan Carl Budich

We show that the Hall coefficient of the boson+fermion dimer model for the pseudogap phase of high temperature superconductivity introduced in Punk et al. changes sign from negative at low temperatures to positive at high temperatures at a…

强关联电子 · 物理学 2018-04-03 Garry Goldstein

The Mott transition is usually considered as resulting from the divergence of the effective mass of the quasiparticle in the Fermi-liquid theory; the dispersion relation around the Fermi level is considered to become flat towards the Mott…

强关联电子 · 物理学 2020-10-26 Masanori Kohno

We present strong numerical evidence for the band Kondo effect in the doped 2D Hubbard model by showing the systematic change of the density of states, imaginary part of the self-energy, effective magnetic moment and quasiparticle residue…

凝聚态物理 · 物理学 2007-05-23 Bumsoo Kyung

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

A relaxation-function theory for the dynamic spin susceptibility in the $t$--$J$ model is presented. By a sum-rule-conserving generalized mean-field approximation (GMFA), the two-spin correlation functions of arbitrary range, the staggered…

强关联电子 · 物理学 2015-05-13 A. A. Vladimirov , D. Ihle , N. M. Plakida

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

We study ground-state properties of the two-dimensional Hubbard model at half filling by improving variational Monte Carlo method and by implementing quantum-number projection and multi-variable optimization. The improved variational wave…

强关联电子 · 物理学 2008-08-30 Daisuke Tahara , Masatoshi Imada

We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…

强关联电子 · 物理学 2015-06-18 Eiki Iyoda , Sumio Ishihara

Dynamic Hubbard models describe coupling of a boson degree of freedom to the on-site electronic double occupancy. In the limit of infinite boson frequency this coupling gives rise to a correlated hopping term in the effective Hamiltonian…

超导电性 · 物理学 2011-04-13 F. Marsiglio , R. Teshima , J. E. Hirsch

The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective…

强关联电子 · 物理学 2011-12-30 L. Didukh , O. Kramar , Yu. Skorenkyy , Yu. Dovhopyaty

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

The effect of a magnetic field on Mott-Hubbard systems is investigated by studying the half-filled Hubbard model in the limit of infinite dimensions. A first-order metamagnetic transition between the strongly correlated metal and the Mott…

凝聚态物理 · 物理学 2009-10-22 Laurent Laloux , Antoine Georges , Werner Krauth

The doping dependence of the superconducting state for the 2D one-band Hubbard Hamiltonian is determined. By using an Eliashberg-type theory, we find that the gap function $\Delta_{\bf k}$ has a $d_{x^2-y^2}$ symmetry in momentum space and…

凝聚态物理 · 物理学 2009-10-28 S. Grabowski , J. Schmalian , M. Langer , K. H. Bennemann

We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…

凝聚态物理 · 物理学 2007-05-23 Goetz Moeller , Qimiao Si , Gabriel Kotliar , Marcelo Rozenberg

The magnetic correlation in the Hubbard model on a two-dimensional anisotropic triangular lattice is studied by using the determinant quantum Monte Carlo method. Around half filling, it is found that the increasing frustration $t'/t$ could…

强关联电子 · 物理学 2016-04-29 Peng Wang , Xinran Ma , Jingyao Wang , Yamei Zeng , Ying Liang , Tianxing Ma

The anisotropic degenerate two-orbital Hubbard model is studied within dynamical mean-field theory at low temperatures. High-precision calculations on the basis of a refined quantum Monte Carlo (QMC) method reveal that two distinct…

强关联电子 · 物理学 2007-05-23 C. Knecht , N. Blümer , P. G. J. van Dongen