相关论文: Line Junctions in the Quantum Hall Effect

We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…

We study the tunneling between two quantum Hall systems, along a quasi one-dimensional interface. A detailed analysis relates microscopic parameters, characterizing the potential barrier, with the effective field theory model for the…

When phonons couple to fermions in 2D semimetals, the interaction may turn the system into an insulator. There are several insulating phases in which the time reversal and the sublattice symmetries are spontaneously broken. Examples are…

We propose a method by which the quantization of the Hall conductance can be directly measured in the transport of a one-dimensional atomic gas. Our approach builds on two main ingredients: (1) a constriction optical potential, which…

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…

We show that different universal values can be obtained for the two-terminal conductance of a fractional quantum Hall state. At large voltages, or strong coupling, the conductance of a point-like tunneling junction between an electron gas…

Certain fractional quantum Hall edges have been predicted to undergo quantum phase transitions which reduce the number of edge channels and at the same time bind electrons together. However, detailed studies of experimental signatures of…

We report on the transition from magnetic edge to electric edge transport in a split magnetic gate device which applies a notch magnetic field to a two-dimensional electron gas. The gate bias allows tuning the overlap of magnetic and…

Current Luttinger liquid edge state theories for filling $\nu=2/3$ predict a non-universal Hall conductance, in disagreement with experiment. Upon inclusion of random edge tunnelling we find a phase transition into a new…

Controllable point junctions between different quantum Hall phases are a necessary building block for the development of mesoscopic circuits based on fractionally-charged quasiparticles. We demonstrate how particle-hole duality can be…

Quantum Hall edge states in proximity to a superconductor (SC) usually acquire a non-quantized electron-to-hole conversion probability in transport, due to non-universal SC couplings and disorders. With counter-propagating modes, we show…

The quantum anomalous Hall (QAH) effect holds fundamental importance in topological physics and technological promise for electronics. It is generally believed that the QAH effect can only be realized in insulators. In this Letter, we…

In this paper we address some of the properties of quantum Hall line junctions (QHLJ) that occur near barriers separating electron gases on quantum Hall plateaus.In narrow barriers where electron tunneling can occur, the low energy physics…

The crossover from the quantum Hall regime to the Hall-insulator is investigated by varying the strength of the diagonal disorder in a 2d tight-binding model. The Hall and longitudinal conductivities and the behavior of the critical states…

In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…

We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…

Experimental and theoretical investigations on the integer quantized Hall effect in gate defined narrow Hall bars are presented. At low electron mobility the classical (high temperature) Hall resistance line RH(B) cuts through the center of…

We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…

Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high…

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the…