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相关论文: Dimensional crossover and metal-insulator transiti…

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In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…

强关联电子 · 物理学 2011-05-18 Hanna Terletska , Vladimir Dobrosavljević

We discuss the recently discovered two-dimensional metal-insulator transition in zero magnetic field in the light of the scaling theory of localization. We demonstrate that the observed symmetry relating conductivity and resistivity follows…

无序系统与神经网络 · 物理学 2009-10-30 V. Dobrosavljevic , Elihu Abrahams , E. Miranda , Sudip Chakravarty

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…

强关联电子 · 物理学 2014-08-15 Rubem Mondaini , Thereza Paiva

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

The superconductor-insulator transition in two dimensions has been widely investigated as a paradigmatic quantum phase transition. The topic remains controversial, however, because many experiments exhibit a metallic regime with saturating…

介观与纳米尺度物理 · 物理学 2019-06-07 C. G. L. Bøttcher , F. Nichele , M. Kjaergaard , H. J. Suominen , J. Shabani , C. J. Palmstrøm , C. M. Marcus

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

Metal-insulator transitions and different ground-state phases in quasi-one- dimensional materials, (R_1R_2-DCNQI)_2M (R_1=R_2=CH_3, I and M=Ag, Cu), are studied with a renormalization-group method. We use one-dimensional continuum models…

强关联电子 · 物理学 2009-04-27 K. Yonemitsu

The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$…

强关联电子 · 物理学 2014-01-15 I. Kezsmarki , G. Mihaly , R. Gaal , N. Barisic , A. Akrap , H. Berger , L. Forro , C. C. Homes , L. Mihaly

The quasi-one-dimensional linear chain compound HfTe3 is experimentally and theoretically explored in the few- to single-chain limit. Confining the material within the hollow core of carbon nanotubes allows isolation of the chains and…

Electronic phase separation (EPS) originates from an incomplete transformation between electronic phases, causing the inhomogeneous spatial distribution of electronic properties. In the system of two-dimensional electron gas (2DEG), the EPS…

The microscopic mechanism of the metal-insulator transition is studied by orbital-resolved 51V NMR spectroscopy in a prototype of the quasi-one-dimensional system V6O13. We uncover that the transition involves a site-selective d orbital…

强关联电子 · 物理学 2015-04-24 Yasuhiro Shimizu , Satoshi Aoyama , Takaaki Jinno , Masayuki Itoh , Yutaka Ueda

Ground state of the periodic Anderson model on a triangular lattice is systematically investigated by the mean-field approximation. We found that the model exhibits two different types of partially disordered states: one is at half filling…

强关联电子 · 物理学 2014-07-30 Satoru Hayami , Masafumi Udagawa , Yukitoshi Motome

The Hubbard model at temperatures above the N\'{e}el transition, despite being a paramagnet, can exhibit rich physics due to the interplay of Fermi surface, on-site interaction $U$ and thermal fluctuations. Nevertheless, the understanding…

强关联电子 · 物理学 2025-01-23 Yu-Feng Song , Youjin Deng , Yuan-Yao He

The possibility of driving an Anderson metal-insulator transition in the presence of scale-free disorder by changing the correlation exponent is numerically investigated. We calculate the localization length for quasi-one-dimensional…

无序系统与神经网络 · 物理学 2012-06-05 Alexander Croy , Michael Schreiber

One dimensional spin-1/2 $XXZ$ model in a transverse magnetic field is studied. It is shown that the field induces the gap in the spectrum of the model with easy-plain anisotropy. Using conformal invariance the field dependence of the gap…

强关联电子 · 物理学 2009-11-07 D. V. Dmitriev , V. Ya. Krivnov , A. A. Ovchinnikov , A. Langari

A pressure-induced simultaneous metal-insulator transition (MIT) and structural-phase transformation in lithium hydride with about 1% volume collapse has been predicted by means of the local density approximation (LDA) in conjunction with…

材料科学 · 物理学 2009-11-10 S. Lebègue , M. Alouani , B. Arnaud , W. E. Pickett

We investigate the role of short-ranged electron-electron interactions in a paradigmatic model of three dimensional topological insulators, using dynamical mean-field theory and focusing on non magnetically ordered solutions. The…

强关联电子 · 物理学 2016-06-09 A. Amaricci , J. C. Budich , M. Capone , B. Trauzettel , G. Sangiovanni

In contrast to the first-order correlation-driven Mott metal-insulator transition (MIT), contin- uous disorder-driven transitions are intrinsically quantum critical. Here, we investigate transport quantum criticality in the Falicov-Kimball…

强关联电子 · 物理学 2017-09-21 P. Haldar , M. S. Laad , S. R. Hassan

Metal-insulator transition (MIT) materials are a useful platform for emerging microelectronic, optoelectronic, and neuromorphic devices, but their discovery is hindered by the high computational cost of electronic structure modeling, the…

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