相关论文: Quantum Hall effect in single wide quantum wells
We investigate theoretically the fractional quantum Hall effect at half-filling in the lowest Landau level observed in asymmetric wide quantum wells. The asymmetry can be achieved by a potential bias applied between the two sides of the…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
In two-dimensional hole systems confined to wide GaAs quantum wells, where the heavy- and light- hole states are close in energy, we observe a very unusual crossing of the lowest two Landau levels as the sample is tilted in magnetic field.…
The evolution of the fractional quantum Hall state at filling 5/2 is studied in density tunable two-dimensional electron systems formed in wide wells in which it is possible to induce a transition from single to two subband occupancy. In 80…
Possible phase transitions between incompressible quantum Hall states and compressible three-dimensional states are discussed for infinite-layer electron systems in strong magnetic field. By variational Monte Carlo calculation, relative…
We investigate numerically different phases that can occur at half filling in the lowest and the first excited Landau levels in wide-well twodimensional electron systems exposed to a perpendicular magnetic field. Within a twocomponent model…
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant…
We report the observation of developing fractional quantum Hall states at Landau level filling factors $\nu = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The…
In high magnetic fields ($B$), two dimensional electron systems (2DESs) can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include…
We numerically study a 5/2 fractional quantum Hall system with even number of electrons using the exact diagonalization where both the strong Landau level (LL) mixing and a finite width of the quantum well have been considered and adapted…
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…
We study the nature of the \nu=5/2 quantum Hall state in wide quantum wells under the mixing of electronic subbands and Landau levels. We introduce a general method to analyze the Moore-Read Pfaffian state and its particle-hole conjugate,…
Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $\nu=1$ integer quantum Hall states in the lowest Landau level near filling factors…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is…
The ground states of electrons in two vertically coupled quantum dots in the presence of an external magnetic field have been studied within the density functional theory. A phase diagram of the transition to the quantum Hall state in…
Quantum Hall states at filling fraction $\nu$=5/2 are examined by numerical diagonalization. Spin-polarized and -unpolarized states of systems with $N\le 18$ electrons are studied, neglecting effects of Landau level mixing. We find that the…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The low-temperature magnetoresistance of parabolic quantum wells displays pronounced minima between integer filling factors. Concomitantly the Hall effect exhibits overshoots and plateau-like features next to well-defined ordinary quantum…
We report on the properties of a system of interacting electrons in a narrow channel in the quantum Hall effect regime. It is shown that an increase in the strength of the Coulomb interaction causes abrupt changes in the width of the…