相关论文: Coulomb Blockade and Digital Single-Electron Devic…

When a cerocene molecule is chemisorbed on metallic substrate, or when an asymmetric double dot is hybridized with itinerant electrons, its singlet ground state crosses its lowly excited triplet state, leading to a competition between the…

Recently, the electron transport through a quasi-one dimensional (quasi-1D) electron gas was investigated experimentally as a function of the confining potential. We present a physical model for quantum ballistic transport of electrons…

We investigate the properties of a hybrid single electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from…

The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…

A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…

We report the fabrication of multi-island single-electron devices made by lithographic contacting of self-assembled alkanethiol-coated gold nanocrystals. The advantages of this method, which bridges the dimensional gap between lithographic…

We analyze cotunneling transport through two quantum dots in series weakly coupled to external ferromagnetic leads. In the Coulomb blockade regime the electric current flows due to third-order tunneling, while the second-order…

Images of a single-electron quantum dot were obtained in the Coulomb blockade regime at liquid He temperatures using a cooled scanning probe microscope (SPM). The charged SPM tip shifts the lowest energy level in the dot and creates a ring…

We present a first-principles method for calculating the charging energy of a molecular single-electron transistor operating in the Coulomb blockade regime. The properties of the molecule are modeled using density-functional theory, the…

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…

The electron transport through an array of tunnel junctions consisting of an STM tip and a granular film is studied both theoretically and experimentally. When the tunnel resistance between the tip and a granule on the surface is much…

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition,…

We develop a theory of Coulomb oscillations in superconducting devices in the limit of small charging energy $E_C \ll \Delta$. We consider a small superconducting grain of finite capacity connected to two superconducting leads by nearly…

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron…

We perform a numerical analysis of recently proposed scaling functions for the single electron box. Specifically, we study the ``magnetic'' susceptibility as a function of tunneling conductance and gate charge, and the effective charging…

Understanding how the mechanism of charge transport through molecular tunnel junctions depends on temperature is crucial to control electronic function in molecular electronic devices. With just a few systems investigated as a function of…

Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric…

Monolayer films of transition metal dichalcogenides (in particular, MoS2, MoSe2, WS2, and WSe2) can be considered as ideal systems for the studies of high-temperature electron-hole liquids. The quasi-two-dimensional nature of electrons and…

Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…