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相关论文: Exact Solution of a Hubbard Chain with Bond-Charge…

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The Hubbard model with an additional bond-charge interaction $X$ is solved exactly in one dimension for the case $t=X$ where $t$ is the hopping amplitude. In this case the number of doubly occupied sites is conserved. In the sector with no…

凝聚态物理 · 物理学 2009-10-22 Andreas Schadschneider

Using quantum field theory and bosonization, we determine the quantum phase diagram of the one-dimensional Hubbard model with bond-charge interaction $X$ in addition to the usual Coulomb repulsion $U$ at half-filling, for small values of…

强关联电子 · 物理学 2010-11-30 A. O. Dobry , A. A. Aligia

We study a two-dimensional model of topological superconductor with equal spin pairing and repulsive Hubbard interaction. When the pairing gap equals to the hopping constant, half of the spectrum of this model are flat bands, which makes…

超导电性 · 物理学 2021-07-19 Yiting Deng , Yan He

We determine the quantum phase diagram of the one-dimensional Hubbard model with bond-charge interaction X in addition to the usual Coulomb repulsion U at half-filling. For large enough X and positive U the model shows three phases. For…

We investigate the one-dimensional Hubbard model with an additional bond-charge interaction, recently considered in the description of compounds that exhibit strong 1D features above the temperature of ordered phases. The partition function…

强关联电子 · 物理学 2009-11-07 Fabrizio Dolcini , Arianna Montorsi

The slave boson mean-field studies of the ground state of the Hubbard model with correlated hopping were performed. The approach qualitatively recovers the exact results for the case of the hopping integral t equal to the correlated hopping…

超导电性 · 物理学 2009-10-30 Bogdan R. Bulka

We investigate the metal-insulator transition of the one-dimensional SU(N) Hubbard model for repulsive interaction. Using the bosonization approach a Mott transition in the charge sector at half-filling (k_F=\pi/Na_0) is conjectured for N >…

强关联电子 · 物理学 2009-10-31 Roland Assaraf , Patrick Azaria , Michel Caffarel , Philippe Lecheminant

We study the Mott transition as a function of interaction strength in the half-filled Hubbard chain with next-nearest-neighbor hopping t' by calculating the response to an external electric field using the Density Matrix Renormalization…

强关联电子 · 物理学 2009-10-31 C. Aebischer , D. Baeriswyl , R. M. Noack

We report the results of exact diagonalization studies of Hubbard models on a $4\times 4$ square lattice with periodic boundary conditions and various degrees and patterns of inhomogeneity, which are represented by inequivalent hopping…

超导电性 · 物理学 2009-11-13 Wei-Feng Tsai , Hong Yao , Andreas Laeuchli , Steven A. Kivelson

The magnetic susceptibility of the quarter-filled one-dimensional extended Hubbard model is calculated using the density-matrix renormalization group technique. It is found that in the charge gap regime of the model ($U> 4t $ and $V > 2t$),…

强关联电子 · 物理学 2007-05-23 S. Moukouri

We determine the quantum phase diagram of the Hubbard chain with electron-hole symmetric correlated hopping at 1/2- and 1/4-filling using geometric concepts and continuum limit field theory. The long distance behavior of various correlation…

凝聚态物理 · 物理学 2007-05-23 A. A. Aligia , K. Hallberg , C. D. Batista , G. Ortiz

The equation for the electron Green's function of the fermionic Hubbard model, derived using the strong coupling diagram technique, is solved self-consistently for the near-neighbor form of the kinetic energy and for half-filling. In this…

强关联电子 · 物理学 2015-06-11 A. Sherman

We show the existence of an exact ground state in certain parameter regimes of one-dimensional half-filled extended Hubbard model with site-off-diagonal interactions. In this ground state, the bond-located spin correlation exhibits a…

强关联电子 · 物理学 2009-11-07 Kazuhito Itoh , Masaaki Nakamura , Norihiro Muramoto

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

Nonlinear transport in the one dimensional Hubbard model at half-filling under a finite bias voltage is investigated by the adaptive time-dependent density matrix renormalization group method. For repulsive on-site interaction, dielectric…

强关联电子 · 物理学 2015-03-17 Shunsuke Kirino , Kazuo Ueda

The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_\mathrm{c},U_\mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers…

强关联电子 · 物理学 2020-04-07 A. Reymbaut , M. Boulay , L. Fratino , P. Sémon , Wei Wu , G. Sordi , A. -M. S. Tremblay

The ground state of a one-dimensional Hubbard model having the next-nearest neighbor hopping (t') as well as the nearest-neighbor one (t) is numerically investigated at half-filling. A quantum Monte Carlo result shows a slowly decaying…

强关联电子 · 物理学 2009-10-30 Kazuhiko Kuroki , Ryotaro Arita , Hideo Aoki

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla

Exact ground states, charge densities and excitation energies are found using valence bond methods for N-site modified Hubbard models with uniform spacing. At the neutral-ionic transition (NIT), the ground state has a symmetry crossover in…

强关联电子 · 物理学 2009-10-31 Y. Anusooya-Pati , Z. G. Soos , A. Painelli

We investigate the static charge response for the Hubbard model. Using the Slave-Boson method in the saddle-point approximation we calculate the charge susceptibility. We find that RPA works quite well close to half-filling, breaking, of…

强关联电子 · 物理学 2009-11-07 Erik Koch
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