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相关论文: Correlation Induced Insulator to Metal Transitions

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The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

Using the nonlocal coherent-potential approximation we study the effect of intersite spatial correlations on the transition from band insulator to metal as well as from metal to Mott insulator in the "alloy analogy" approach to the…

强关联电子 · 物理学 2014-07-22 D. A. Rowlands , Yu-Zhong Zhang

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

强关联电子 · 物理学 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

In this paper, based on the formulation of an O(3) non-linear sigma model, we study the two-dimensional Pi-flux Hubbard model at half-filling. A quantum non-magnetic insulator is explored near the metal-insulator transition that may be a…

强关联电子 · 物理学 2015-04-28 Gao-Yong Sun , Su-Peng Kou

We study the boundary physics of bulk insulators by considering three coupled Hubbard chains in a linear confining potential. In the Hartree-Fock approximation, the ground state at and slightly off the particle-hole symmetric point remains…

介观与纳米尺度物理 · 物理学 2022-02-10 Niels John , Yuval Gefen , Bernd Rosenow

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

Spin and charge fluctuations at vicinity of metal-to-Mott insulator transitions are studied in an organic solid with molecular dimers. The extended Hubbard model taking account of the internal electronic degree of freedom in a molecular…

强关联电子 · 物理学 2017-04-26 Naomichi Sato , Tsutomu Watanabe , Makoto Naka , Sumio Ishihara

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

We demonstrate, using dynamical mean-field theory with the hybridization expansion continuous time quantum montecarlo impurity solver, a rich phase diagram with {\em correlation driven metallic and half-metallic phases} in a simple model of…

强关联电子 · 物理学 2021-04-21 Soumen Bag , Arti Garg , H. R. Krishnamurthy

The influence of Coulomb interaction on transport properties of spinless electrons in small disordered two dimensional systems is studied within a tight binding model. Spatial correlations, inverse participation ratio, and multifractal…

介观与纳米尺度物理 · 物理学 2009-10-31 Richard Berkovits , Jan W. Kantelhardt , Yshai Avishai , Shlomo Havlin , Armin Bunde

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

强关联电子 · 物理学 2009-10-30 Dragana Popovic , A. B. Fowler , S. Washburn

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

凝聚态物理 · 物理学 2009-10-28 Stefan Blawid , Hoangh Anh Tuan , Takashi Yanagisawa , Peter Fulde

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an…

强关联电子 · 物理学 2021-05-14 Yejun Feng , Yishu Wang , D. M. Silevitch , S. E. Cooper , D. Mandrus , Patrick A. Lee , T. F. Rosenbaum

Using finite-temperature determinantal quantum Monte Carlo simulations, we examine the thermodynamic properties of the extended Hubbard model on the half-filled square lattice in the Slater regime at intermediate coupling. We consider both…

强关联电子 · 物理学 2022-10-19 Alexander Sushchyev , Stefan Wessel

We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…

强关联电子 · 物理学 2007-05-23 G. I. Japaridze , R. M. Noack , D. Baeriswyl

The $2d$ Hubbard model with nearest-neighbour hopping on the square lattice and an average of one electron per site is known to undergo an extended crossover from metallic to insulating behavior driven by proliferating antiferromagnetic…

强关联电子 · 物理学 2020-03-19 Aaram J. Kim , Fedor Simkovic , Evgeny Kozik

Motivated by the recent experimental observation of an intermediate bosonic metallic state in the two-dimensional superconductor-insulator transition at $T=0$, we study an extended Bose Hubbard model in the limit of large number of…

超导电性 · 物理学 2022-08-12 Håvard H. Haugen , Asle Sudbø

More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…

We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a…

强关联电子 · 物理学 2016-12-06 D. Belitz , T. R. Kirkpatrick