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相关论文: Conductance statistics in small insulating GaAs:Si…

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We analyse in detail Mott's variable range hopping in one dimension, expanding on earlier work by Raikh and Ruzin. We show that the large conductance fluctuations in disordered insulators result from a subtle interplay between purely…

凝聚态物理 · 物理学 2009-10-22 François Ladieu , Jean-Philippe Bouchaud

We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic…

介观与纳米尺度物理 · 物理学 2007-05-23 W. Poirier , D. Mailly , M. Sanquer

Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…

强关联电子 · 物理学 2009-10-30 K. P. Li , Dragana Popovic , S. Washburn

Quasi-ballistic semiconductor quantum wires are exposed to localized perpendicular magnetic fields, also known as magnetic barriers. Pronounced, reproducible conductance fluctuations as a function of the magnetic barrier amplitude are…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Hugger , Hengyi Xu , A. Tarasov , M. Cerchez , T. Heinzel , I. V. Zozoulenko , D. Reuter , A. D. Wieck

In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (n_c \approx 4 x 10^18 /cc). The measurements show that…

无序系统与神经网络 · 物理学 2007-05-23 Arindam Ghosh , A. K. Raychaudhuri

A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their…

介观与纳米尺度物理 · 物理学 2009-10-31 T. Heinzel , G. Salis , R. Held , S. Luescher , K. Ensslin , W. Wegscheider , M. Bichler

We report investigations of conductance fluctuations (noise) in doped silicon at low temperatures (T$<20$K) as it is tuned through the metal-insulator transition (MIT). The scaled magnitude of noise, $\gamma_H$, increases with decrease in T…

无序系统与神经网络 · 物理学 2009-11-07 Swastik Kar , A. K. Raychaudhuri , Arindam Ghosh

The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe…

介观与纳米尺度物理 · 物理学 2009-10-30 Alexander van Oudenaarden , M. H. Devoret , E. H. Visscher , Yu. V. Nazarov , J. E. Mooij

In this paper we present and discuss our results for the conductance and conductance fluctuations of narrow quantum wires with two types of disorder: boundary roughness (hard wall confining potential) and islands of strongly scattering…

凝聚态物理 · 物理学 2009-10-22 K Nikolić , A MacKinnon

We reconcile the phenomenon of mesoscopic conductance fluctuations with the single parameter scaling theory of the Anderson transition. We calculate three averages of the conductance distribution: $\exp(<\ln g>)$, $<g>$ and $1/<R>$ where…

无序系统与神经网络 · 物理学 2009-11-07 Keith Slevin , Peter Markoš , Tomi Ohtsuki

We report the measurement of the third moment of current fluctuations in a short metallic wire at low temperature. The data are deduced from the statistics of voltage fluctuations across the conductor using a careful determination of…

介观与纳米尺度物理 · 物理学 2018-07-18 Edouard Pinsolle , Samuel Houle , Christian Lupien , Bertrand Reulet

We study fluctuation conductivity in a single crystal of BaFe$_{1.9}$Ni$_{0.1}$As$_2$ superconductor ($T_c$ = 20 K) as a function of temperature and applied magnetic field. Magneto-conductivity curves, $\Delta \sigma$ vs. $T$, were analyzed…

超导电性 · 物理学 2014-01-10 S. Salem-Sugui, , A. D. Alvarenga , R. I. Rey , J. Mosqueira , H-Q Luo , X-Y Lu

We describe the statistics of temperature fluctuations in a SINIS structure, where a normal metal island (N) is coupled by tunnel junctions (I) to two superconducting leads (S). We specify conditions under which this structure exhibits…

介观与纳米尺度物理 · 物理学 2013-05-30 M. A. Laakso , T. T. Heikkilä , Yuli V. Nazarov

Quantum behavior of superconducting nanowires may essentially depend on the employed experimental setup. Here we investigate a setup that enables passing equilibrium supercurrent across an arbitrary segment of the wire without restricting…

介观与纳米尺度物理 · 物理学 2019-08-07 Alexey Radkevich , Andrew G. Semenov , Andrei D. Zaikin

We demonstrate the presence of energy dependent fluctuations in the localization length, which depend on the disorder distribution. These fluctuations lead to Ensemble Averaged Conductance Fluctuations (EACF) and are enhanced by large…

无序系统与神经网络 · 物理学 2009-11-13 M. Hilke

We study electronic transport through a strongly interacting quantum dot by using the finite temperature extension of Wilson's numerical renormalization group (NRG) method. This allows the linear conductance to be calculated at all…

强关联电子 · 物理学 2007-05-23 T. A. Costi

In highly doped uncompensated p-type layers within the central part of GaAs/AlGaAs quantum wells at low temperatures we observed an activated behavior of the conductivity with low activation energies (1-3) meV which can not be ascribed to…

无序系统与神经网络 · 物理学 2015-05-13 N. V. Agrinskaya , V. I. Kozub , D. V. Shamshur

We have investigated the conductance of long quantum wires formed in GaAs/AlGaAs heterostructures. Using realistic fluctuation potentials from donor layers we have simulated numerically the conductance of four different kinds of wires.…

介观与纳米尺度物理 · 物理学 2010-10-11 A. A. Starikov , I. I. Yakimenko , K. -F. Berggren , A. C. Graham , K. J. Thomas , M. Pepper , M. Y. Simmons

We report on low temperature conductance measurements of gold nanogaps fabricated by controlled electromigration. Fluctuations of the conductance due to quantum interferences and depending both on bias voltage and magnetic field are…

介观与纳米尺度物理 · 物理学 2015-05-20 P. Petit , A. Anthore , M. L. Della Rocca , P. Lafarge

Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of…

介观与纳米尺度物理 · 物理学 2018-03-14 Hsiu-Chuan Hsu , Ioannis Kleftogiannis , Guang-Yu Guo , Victor A. Gopar
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