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相关论文: Hole doping MgB$_2$ without chemical substitution

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First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band…

超导电性 · 物理学 2009-11-07 N. I. Medvedeva , A. L. Ivanovskii , J. E. Medvedeva , A. J. Freeman

We investigate how field-effect doping affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and…

介观与纳米尺度物理 · 物理学 2015-05-05 Thomas Brumme , Matteo Calandra , Francesco Mauri

Effect of doping of graphene either by Boron (B), Nitrogen (N) or co-doped by B and N is studied using density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron…

介观与纳米尺度物理 · 物理学 2012-07-31 Sugata Mukherjee , T. P. Kaloni

Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of…

材料科学 · 物理学 2009-10-01 Isabella Gierz , Christian Riedl , Ulrich Starke , Christian R. Ast , Klaus Kern

We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm-thick bilayers were found to be present in regions of the interface of…

材料科学 · 物理学 2021-07-16 Jihye Shim , Chun Hung Lui , Taeg Yeoung Ko , Young-Jun Yu , Philip Kim , Tony F. Heinz , Sunmin Ryu

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

材料科学 · 物理学 2009-11-13 G. Giovannetti , P. A. Khomyakov , G. Brocks , V. M. Karpan , J. van den Brink , P. J. Kelly

We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simlutate the electronic band structure and show the effects of impurity doping (0-3.91\%) in…

Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one…

介观与纳米尺度物理 · 物理学 2012-09-25 Pooja Rani , V. K. Jindal

The electronic structure of electron-doped polycrystalline Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was examined by electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) and first-principle…

超导电性 · 物理学 2007-05-23 R. F. Klie , J. C. Zheng , Y. Zhu , A. J. Zambano , L. D. Cooley

Measurements of x-ray emission and absorption spectra of the constituents of MgB$_2$ are presented. The results obtained are in good agreement with calculated x-ray spectra, with dipole matrix elements taken into account. The comparison of…

Heavy carbon doping of MgB$_2$ is studied by first principles electronic structure studies of two types, an ordered supercell (Mg(B$_{1-x}$C$_{x}$)$_{2}$,x=0.0833) and also the coherent potential approximation method that incorporates…

超导电性 · 物理学 2007-05-23 Deepa Kasinathan , K. -W. Lee , W. E. Pickett

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

It has been shown that graphene doping is sufficient to lead to an improvement in the critical current density - field performance (Jc(B)), with little change in the transition temperature in MgB2. At 3.7 at% graphene doping of MgB2 an…

超导电性 · 物理学 2015-05-18 X. Xu , S. X. Dou , X. L. Wang , J. H. Kim , J. A. Stride , M. Choucair , W. K. Yeoh , R. K. Zheng , S. P. Ringer

Layered electrides, as typified by Ca$_2$N, are a new class of quasi-two-dimensional materials with low work functions. Using first-principles calculations, we have shown that a graphene layer deposited on Ca$_2$N is doped to $n=5\times…

材料科学 · 物理学 2017-12-20 Takeshi Inoshita , Masaru Tsukada , Susumu Saito , Hideo Hosono

Unlike single layer graphene, in the case of $AB$-stacked bilayer graphene (BLG) one can induce a non-zero energy gap by breaking the inversion symmetry between the two layers using a perpendicular electric field. This is an essential…

介观与纳米尺度物理 · 物理学 2018-09-05 G. A. Nemnes , T. L. Mitran , A. Manolescu , Daniela Dragoman

We have studied the structural and electronic properties of Mg(1-x)Al(x)B2 within the Virtual Crystal Approximation (VCA) by means of first-principles total-energy calculations. Results for the lattice parameters, the electronic band…

超导电性 · 物理学 2009-11-07 O. de la Pena , A. Aguayo , R. de Coss

This paper deals with the physics of monolayer graphite, with a particular focus on the electronics and structural properties. In contrast to the previous electronic band structure of doped single-walled carbon nanotube calculation, where…

介观与纳米尺度物理 · 物理学 2010-12-30 Osman Ozsoy , Kikuo Harigaya

A series of calculations on MgB2 and related isoelectronic systems indicates that the layer of Mg(2+) ions lowers the non-bonding B "pi" (p_z) bands relative to the bonding "sigma" (sp_xp_y) bands compared to graphite, causing sigma --> pi…

超导电性 · 物理学 2009-11-07 J. M. An , W. E. Pickett

Using ab initio methods, we propose a simple and effective way to substitutionally dope graphene sheets with Boron. The method consists of selectively exposing each side of the graphene sheet to different elements. We first expose one side…

材料科学 · 物理学 2009-11-13 Renato B. Pontes , A. Fazzio , Gustavo M. Dalpian

The thermodynamic, kinetic and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping was found to heighten the diffusion potential barrier, while hole doping lowers it.…

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