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We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces…

介观与纳米尺度物理 · 物理学 2016-06-22 Andrew Browning , Norio Kumada , Yoshiaki Sekine , Hiroshi Irie , Koji Muraki , Hideki Yamamoto

We calculate the zero-temperature resistivity of model 3-dimensional disordered metals described by tight-binding Hamiltonians. Two different mechanisms of disorder are considered: diagonal and off-diagonal. The non-equilibrium Green…

无序系统与神经网络 · 物理学 2013-05-29 Yulia Gilman , Jamil Tahir-Kheli , Philip B. Allen , William A. Goddard

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi

We study the transmission of a disordered waveguide subjected to a finite bias field. The statisticaldistribution of transmission is analytically shown to take a universal form. It depends on a singleparameter, the system length expressed…

Linear conductance of junctions formed by graphene flakes with order of nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20000 atoms and the conductance is studied as a…

介观与纳米尺度物理 · 物理学 2015-10-08 Martin Konôpka

Transport in disordered armchair graphene nanoribbons (AGR) with long-range correlation between quantum wire contact is investigated by transfer matrix combined with Landauer's formula. Metal-insulator transition is induced by disorder in…

无序系统与神经网络 · 物理学 2015-06-03 G. P. Zhang , M. Gao , Y. Y. Zhang , N. Liu , Z. J. Qin , M. H. Shangguan

We study transport properties of a disordered tight-binding model (XX spin chain) in the presence of dephasing. Focusing on diffusive behavior in the thermodynamic limit at high energies, we analytically derive the dependence of…

强关联电子 · 物理学 2013-03-05 Marko Znidaric , Martin Horvat

We study the temperature-dependent corrections to the conductance due to electron-electron (e-e) interactions in clean two-dimensional conductors, such as lightly doped graphene or other Dirac matter. We use semiclassical Boltzmann kinetic…

介观与纳米尺度物理 · 物理学 2018-08-01 A. Uzair , K. Sabeeh , Markus Mueller

Kubo formula is used to get the scaling behavior of the static conductance distribution of wide wires showing pure non-diagonal disorder. Following recent works that point to unusual phenomena in some circumstances, scaling at the band…

无序系统与神经网络 · 物理学 2009-11-07 J. A. Verges

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

介观与纳米尺度物理 · 物理学 2013-01-28 S. Das Sarma , E. H. Hwang

We have studied the transport properties of a large graphene double quantum dot under the influence of background disorder potential and magnetic field. At low temperatures, the evolution of the charge-stability diagram as a function of…

介观与纳米尺度物理 · 物理学 2015-10-28 K. L. Chiu , M. R. Connolly , A. Cresti , J. P. Griffiths , G. A. C. Jones , C. G. Smith

In this letter we study the conductance G through one-dimensional quantum wires with disorder configurations characterized by long-tailed distributions (Levy-type disorder). We calculate analytically the conductance distribution which…

介观与纳米尺度物理 · 物理学 2011-01-19 Fernando Falceto , Victor A. Gopar

The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density…

Surface conductance measurements on p-type doped germanium show a small but systematic change to the surface conductivity at different length scales. This effect is independent of the structure of the surface states. We interpret this…

介观与纳米尺度物理 · 物理学 2015-12-24 Jakub Lis , Mateusz Wojtaszek , Rafal Zuzak , Bartosz Such , Marek Szymonski

Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect…

介观与纳米尺度物理 · 物理学 2015-06-12 Shengjun Yuan , Rafael Roldán , Antti-Pekka Jauho , M. I. Katsnelson

We model the effect of phase-breaking collisions on the coherent electron transport in a disordered one-dimensional single-channel wire. In our model the phase-breaking collisions break the wire into segments, where each segment is an…

介观与纳米尺度物理 · 物理学 2007-05-23 Martin Mosko , Pavel Vagner , Peter Markos , Thomas Schaepers

We employ the exact eigenstate basis formalism to study electrical conductivity in graphene, in the presence of short-range diagonal disorder and inter-valley scattering. We find that for disorder strength, $W \ge$ 5, the density of states…

强关联电子 · 物理学 2015-05-28 Rajyavardhan Ray , Avinash Singh

The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these…

介观与纳米尺度物理 · 物理学 2018-03-18 R. Somphonsane , H. Ramamoorthy , G. He , J. Nathawat , S. Yin , J. P. Bird , C. -P. Kwan , N. Arabchigavkani , B. Barut , M. Zhao , Z. Jin , J. Fransson

Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…

介观与纳米尺度物理 · 物理学 2025-10-03 Toni Markovic , Wei Huang , William S. Huxter , Pietro Gambardella , Sebastian Stepanow

We report an experimental investigation of the edge effect on the room-temperature transport in graphene nanoribbon and graphene sheet (both single-layer and bilayer). By measuring the resistance scaling behaviors at both low and high…

介观与纳米尺度物理 · 物理学 2011-02-15 Guangyu Xu , Carlos M. Torres , Jianshi Tang , Jingwei Bai , Emil B. Song , Yu Huang , Xiangfeng Duan , Yuegang Zhang , Kang L. Wang