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相关论文: Anti-Ferroelectric Thin Films Phase Diagrams

200 篇论文

We present the first analytical study of phase transitions in ferroelastic-ferroelectric epitaxial thin films on exactly solvable model. The emerging domain structure with domains of equal width (which may be exponentially large on a "soft"…

统计力学 · 物理学 2009-10-31 A. M. Bratkovsky , A. P. Levanyuk

The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is…

材料科学 · 物理学 2011-10-18 N. A. Pertsev , H. Kohlstedt , B. Dkhil

In this paper, starting from a non-convex and nonlocal $3D-$variational model for the electric polarization in a ferroelectric material, and using an asymptotic process based on dimensional reduction, we analyze junction phenomena for two…

偏微分方程分析 · 数学 2023-11-02 Luisa Faella , Pedro Hernández-Llanos , Ravi Prakash

Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 films grown on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric…

材料科学 · 物理学 2009-03-27 Ludwig Geske , I. B. Misirlioglu , Ionela Vrejoiu , Marin Alexe , Dietrich Hesse

The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric,…

材料科学 · 物理学 2019-05-22 Shi Liu , Brendan M Hanrahan

We report studies of ferroelectricity in ultra-thin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 \AA thick with polarization normal to the surface. Under short-circuit…

材料科学 · 物理学 2007-05-23 Na Sai , Alexie M. Kolpak , Andrew M. Rappe

Very recently there was a report of the discovery using piezoelectric force microscopy (PFM) of a switchable ferroelectric polarization in 1.6 % tensile strained TiO2 thin film with anatase crystal structure (see N. Deepak et al. Adv.…

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show…

介观与纳米尺度物理 · 物理学 2012-01-10 N. C. Bristowe , Massimiliano Stengel , P. B. Littlewood , J. M. Pruneda , Emilio Artacho

Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…

应用物理 · 物理学 2019-04-01 Rachel Onn Winestook , Cecile Saguy , Chun-Hao Ma , Ying-Hao Chu , Yachin Ivry

The ferroelectric properties of disorder Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ thin films are investigated with Monte Carlo simulations on the basis of a first-principles-derived Hamitonian. It is found that there exists a critical thickness of…

材料科学 · 物理学 2009-11-10 Zhongqing Wu , Ningdong Huang , Zhirong Liu , Jian Wu , Wenhui Duan , Bing-Lin Gu , Xiao-Wen Zhang

We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for…

材料科学 · 物理学 2015-06-19 Laurent Baudry , Anaïs Sené , Igor A. Luk'yanchuk , Laurent Lahoche , James F Scott

Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal…

In the archetypal antiferroelectric PbZrO3, antiparallel electric dipoles cancel each other, resulting in zero spontaneous polarisation at the macroscopic level. Yet in actual hysteresis loops, the cancellation is rarely perfect and some…

A comparative theoretical study is presented for the rhombohedral R3 and R3m phase HfO2, of two possible forms in its heavily Zr-doped ferroelectric thin films found recently in experiments. Their structural stability and polarization under…

材料科学 · 物理学 2023-07-03 Wenbin Ouyang , Fanghao Jia , Wei Ren

The antipolar and antiferrodistortive (AFD) components of the antiferroelectric (AFE) transition in PbZr1-xTixO3 (x=0.054) can occur separately and with different kinetics, depending on the sample history, and are accompanied by elastic…

材料科学 · 物理学 2014-06-16 F. Cordero , F. Trequattrini , F. Craciun , C. Galassi

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase…

材料科学 · 物理学 2015-06-04 Hao Zhou , Jiawang Hong , Yihui Zhang , Faxin Li , Yongmao Pei , Daining Fang

Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…

Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films…

材料科学 · 物理学 2009-11-10 V. G. Kukhar , N. A. Pertsev , H. Kohlstedt , R. Waser

Ferroelectric (FE) size effects against the scaling law were reported recently in ultrathin group-IV monochalcogenides, and extrinsic effects (e.g. defects and lattice strains) were often resorted to. Via first-principles based…

材料科学 · 物理学 2018-10-03 Qi-Jun Ye , Zhi-Yuan Liu , Yexin Feng , Peng Gao , Xin-Zheng Li

We consider phase separated states in magnetic oxides (MO) thin films. We show that these states have a non-zero electric polarization. Moreover, the polarization is intimately related to a spatial distribution of magnetization in the film.…

强关联电子 · 物理学 2019-10-09 O. G. Udalov , I. S. Beloborodov