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相关论文: Thermopower measurements on pentacene transistors

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The present work investigates the less explored thermoelectric properties of n-type GaN semiconductors by combined both the experimental and computational tools. Seebeck coefficients of epitaxial thin films of GaN were experimentally…

材料科学 · 物理学 2021-02-24 Ashish Kumar , Saurabh Singh , Ashutosh Patel , K. Asokan , D. Kanjilal

W. Chr. Germs, K. Guo, R. A. J. Janssen, and M. Kemerink [1] recently measured the temperature and concentration dependent seebeck coefficient in organic thin film transistor and found the seebeck coefficient increases with carrier…

无序系统与神经网络 · 物理学 2012-12-04 Ling Li , Nianduan Lu , Ming Liu

Thermoelectric effects, measured by the Seebeck coefficients, refer to the phenomena in which a temperature difference or gradient imposed across a thermoelectric material induces an electrical potential difference or gradient, and vice…

材料科学 · 物理学 2018-12-05 Yi Wang , Yong-Jie Hu , Shun-Li Shang , Bi-Cheng Zhou , Zi-Kui Liu , Long-Qing Chen

A thermal gradient generates an electric field in any solid hosting mobile electrons. In presence of a finite magnetic field (or Berry curvature) this electric field has a transverse component. These are known as Seebeck and Nernst…

强关联电子 · 物理学 2022-04-12 Kamran Behnia

Understanding charge transport in organic semiconductors in large electric fields is relevant to many applications. We present transport measurements in organic field-effect transistors based on poly(3-hexylthiophene) and…

材料科学 · 物理学 2010-03-09 J. H. Worne , J. E. Anthony , D. Natelson

We investigate basic properties of the thermopower (Seebeck coefficient) of phase-coherent conductors under the influence of dephasing and inelastic processes. Transport across the system is caused by a voltage bias or a thermal gradient…

介观与纳米尺度物理 · 物理学 2011-11-17 David Sanchez , Llorens Serra

The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at…

Millivolt range thermovoltage is demonstrated in single InAs-nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias DT>10K and a strong field-effect modulation of electric conductance…

We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental…

介观与纳米尺度物理 · 物理学 2019-01-31 B. Dutta , D. Majidi , A. Garcia Corral , P. Erdman , S. Florens , T. Costi , H. Courtois , C. B. Winkelmann

Organic semiconductors show complex phenomena due to their high energetic disorder. A striking example is the possibility of an increased effective temperature T_eff of the charge carrier distribution relative to the lattice temperature,…

无序系统与神经网络 · 物理学 2025-08-08 Anton Kompatscher , Martijn Kemerink

The usually negligibly small thermoelectric effects in superconducting heterostructures can be boosted dramatically due to the simultaneous effect of spin splitting and spin filtering. Building on an idea of our earlier work [Phys. Rev.…

介观与纳米尺度物理 · 物理学 2015-02-20 P. Machon , M. Eschrig , W. Belzig

We calculate the charge and heat current associate with electrons, generated by a temperature gradient and chemical potential difference between two ends of a tubular nanowire of 30 nm radius in the presence of an external magnetic field…

介观与纳米尺度物理 · 物理学 2020-12-15 Hadi Rezaie Heris , Movaffaq Kateb , Sigurdur I. Erlingsson , Andrei Manolescu

In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most…

介观与纳米尺度物理 · 物理学 2018-04-26 Juan F. Sierra , Ingmar Neumann , Jo Cuppens , Bart Raes , Marius V. Costache , Sergio O. Valenzuela

An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported…

仪器与探测器 · 物理学 2019-08-16 Soumya Biswas , Aditya S Dutt , Nirmal Sabastian , Vinayak B Kamble

We explore the possibility to perform an in-situ transmission electron microscopy (TEM) thermoelectric characterization of materials. A differential heating element on a custom in-situ TEM microchip allows to generate a temperature gradient…

材料科学 · 物理学 2025-01-14 Simon Hettler , Mohammad Furqan , Andres Sotelo , Raul Arenal

We investigate the layered magnetic semiconductor EuTe4, focusing on its intricate charge-density wave (CDW) states near and above room temperature through single-crystal X-ray diffraction (XRD), magnetic, and thermoelectric…

材料科学 · 物理学 2025-08-25 Hidefumi Takahashi , Kiichiro Yoshida , Akitoshi Nakano , Shintaro Ishiwata

At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to…

介观与纳米尺度物理 · 物理学 2023-06-22 Kien Trung Nguyen , Giang Bui-Thanh , Hong Thi Pham , Thuat Nguyen-Tran , Chi Hieu Hoang , Hung Q. Nguyen

The application of a temperature gradient to an extended system generates an electromotive force that induces an electric current in conductors and a macroscopic polarization in insulators. The ratio of the electromotive force to the…

材料科学 · 物理学 2024-02-01 Enrico Drigo , Stefano Baroni

We present measurements of the transient photoconductivity in pentacene single crystals using optical-pump THz-probe spectroscopy. We have measured the temperature and fluence dependence of the mobility of the photoexcited charge carriers…

凝聚态物理 · 物理学 2016-01-26 V. K. Thorsmolle , R. D. Averitt , X. Chi , D. J. Hilton , D. L. Smith , A. P. Ramirez , A. J. Taylor

The Hall and Seebeck coefficients, electrical resistivity and thermal conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K. Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated electrical resistivity…

材料科学 · 物理学 2013-03-18 Andrew F. May , Michael A. McGuire , Hsin Wang
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