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Motivated by the unveiled complexity of nonmagnetic insulating behavior in pentavalent post-perovskite NaIrO$_3$, we have studied its electronic structure and phase diagram in the plane of Coulomb repulsive interaction and spin-orbit…

强关联电子 · 物理学 2014-01-13 Liang Du , Xianlei Sheng , Hongming Weng , Xi Dai

The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and…

We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…

强关联电子 · 物理学 2013-09-13 Suguru Ueda , Norio Kawakami , Manfred Sigrist

To resolve the microscopic origin of magnetism in the Fe2O3/FeTiO3-system, we have performed density functional theory calculations taking into account on-site Coulomb repulsion. By varying systematically the concentration, distribution and…

材料科学 · 物理学 2009-09-23 Rossitza Pentcheva , Hasan Sadat Nabi

We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of…

高能物理 - 理论 · 物理学 2015-10-26 Yi Ling , Peng Liu , Chao Niu , Jian-Pin Wu

We provide solid evidence for the long-standing presumption that model Hamiltonians with short-range interactions faithfully reproduce the physics of the long-range Coulomb interaction in real materials. For this aim, we address a generic…

强关联电子 · 物理学 2025-06-09 Florian Gebhard , Kevin Bauerbach , Örs Legeza

We compare the interaction parameters measured on LaMnO$_3$ to single site dynamical mean field estimates of the critical correlation strength needed to drive a Mott transition, finding that the total correlation strength (electron-electron…

强关联电子 · 物理学 2008-10-24 Chungwei Lin , Andrew. J. Millis

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory (LDA+U) to (n,m) multilayers, 1<n,m<9. If the on-site repulsion on Ti is large enough to model the magnetic insulating behavior of…

材料科学 · 物理学 2007-05-23 Rossitza Pentcheva , Warren E. Pickett

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the…

We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…

强关联电子 · 物理学 2013-04-30 Ru Chen , SungBin Lee , Leon Balents

Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of…

强关联电子 · 物理学 2009-10-31 G. Santoro , S. Sorella , F. Becca , S. Scandolo , E. Tosatti

Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer…

We investigate the phases of the ionic Hubbard model in a two-dimensional square lattice using determinant quantum Monte Carlo (DQMC). At half-filling, when the interaction strength or the staggered potential dominate we find Mott and band…

强关联电子 · 物理学 2009-11-13 K. Bouadim , N. Paris , F. Hebert , G. G. Batrouni , R. T. Scalettar

Mott physics is characterized by an interaction-driven metal-to-insulator transition in a partially filled band. In the resulting insulating state, antiferromagnetic orders of the local moments typically develop, but in rare situations no…

The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO$_3$/SrTiO$_3$ (LCO/STO) interface has been investigated. The interface is either insulating or metallic depending on growth conditions.…

材料科学 · 物理学 2019-06-04 A. H. Al-Tawhid , J. R. Frick , D. B. Dougherty , D. P. Kumah

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a…

One of the hallmarks of topological insulators is the correspondence between the value of its bulk topological invariant and the number of topologically protected edge modes observed in a finite-sized sample. This bulk-boundary…

介观与纳米尺度物理 · 物理学 2021-05-04 Ana Silva , Jasper van Wezel

The interface electronic structure of correlated LaTiO$_3$/SrTiO$_3$ superlattices is investigated by means of the charge self-consistent combination of the local density approximation (LDA) to density functional theory (DFT) with dynamical…

强关联电子 · 物理学 2013-06-07 Frank Lechermann , Lewin Boehnke , Daniel Grieger

A number of intriguing properties emerge upon the formation of the epitaxial interface between the insulating oxides LaAlO3 and SrTiO3. These properties, which include a quasi two-dimensional conducting electron gas, low temperature…

材料科学 · 物理学 2010-08-20 Hanghui Chen , Alexie M. Kolpak , Sohrab Ismail-Beigi

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar