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The gas-liquid transition is a first-order transition terminating at a finite-temperature critical point with diverging density fluctuations. Mott transition, a metal-insulator transition driven by Coulomb repulsion between electrons, has…

超导电性 · 物理学 2007-05-23 Masatoshi Imada

We study three regimes of the Mott transitions characterized by classical, marginally quantum and quantum. In the classical regime, the quantum degeneracy temperature is lower than the critical temperature of the Mott transition, Tc, below…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…

强关联电子 · 物理学 2023-12-05 Kensaku Takai , Youhei Yamaji , Fakher F. Assaad , Masatoshi Imada

We explain in a consistent manner the set of seemingly conflicting experiments on the finite temperature Mott critical point, and demonstrate that the Mott transition is in the Ising universality class. We show that, even though the…

In this paper we critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner--Mott) type, including dilute two-dimension electron gases (2DEG) in…

强关联电子 · 物理学 2022-07-04 Yuting Tan , Vladimir Dobrosavljevic , Louk Rademaker

We consider the critical behavior at an interface which separates two semi-infinite subsystems belonging to different universality classes, thus having different set of critical exponents, but having a common transition temperature. We…

统计力学 · 物理学 2007-05-23 F. A. Bagamery , L. Turban , F. Igloi

We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…

强关联电子 · 物理学 2021-01-29 Louk Rademaker , Valerii V. Vinokur , Alexey Galda

Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…

强关联电子 · 物理学 2015-03-17 M. Abdel-Jawad , R. Kato , I. Watanabe , N. Tajima , Y. Ishii

An organic Mott insulator, $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, was investigated by resistance measurements under continuously controllable He gas pressure. The first-order Mott transition was demonstrated by observation of clear…

强关联电子 · 物理学 2009-11-10 F. Kagawa , T. Itou , K. Miyagawa , K. Kanoda

Unconventional superconductivity typically occurs in materials in which a small change of a parameter such as bandwidth or doping leads to antiferromagnetic or Mott insulating phases. As such competing phases are approached, the properties…

强关联电子 · 物理学 2013-10-15 Moon-Sun Nam , Cecile Meziere , Patrick Batail , Leokadiya Zorina , Sergey Simonov , Arzhang Ardavan

Experimental evidence for the possible universality classes of the metal-insulator transition (MIT) in two dimensions (2D) is discussed. Sufficiently strong disorder, in particular, changes the nature of the transition. Comprehensive…

强关联电子 · 物理学 2016-03-22 Dragana Popović

Strongly correlated metals close to the Mott transition display unusual transport regimes, together with large spectral weight transfers in optics and photoemission. We briefly review the theoretical understanding of these effects, based on…

强关联电子 · 物理学 2009-11-10 A. Georges , S. Florens , T. A. Costi

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

The dynamics of charge carriers close to the Mott transition is explored theoretically and experimentally in the quasi two-dimensional organic charge-transfer salt $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br$_x$Cl$_{1-x}$, with varying Br…

强关联电子 · 物理学 2009-11-13 J. Merino , M. Dumm , N. Drichko , M. Dressel , Ross H. McKenzie

Two-dimensional (2D) turbulence, despite being an idealization of real flows, is of fundamental interest as a model of the spontaneous emergence of order from chaotic flows. The emergence of order often displays critical behavior, whose…

流体动力学 · 物理学 2025-03-21 Filip Novotný , Marek Talíř , Šimon Midlik , Emil Varga

We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and…

强关联电子 · 物理学 2009-11-10 P. Limelette , A. Georges , D. Jerome , P. Wzietek , P. Metcalf , J. M. Honig

Mixed order phase transitions (MOT), which display discontinuous order parameter and diverging correlation length, appear in several seemingly unrelated settings ranging from equilibrium models with long-range interactions to models far…

统计力学 · 物理学 2015-06-22 Amir Bar , David Mukamel
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