相关论文: An ion-implanted silicon single-electron transisto…

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…

We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. To analyze…

Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…

We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…

A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the…

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain…

It is shown that the noise-limited charge sensitivity of a single-electron transistor using superconductors (of either $SISIS$ or $NISIN$ type) operating near the threshold of quasiparticle tunneling, can be considerably higher than that of…

We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…

We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…

Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…

We consider a hybrid single-electron transistor (SET) constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (S-I-N-I-S), operated as a turnstile.…

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition,…

Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…

Based on the understanding that chemical bonds can act as tunnel junctions in the Coulomb blockade regime, and on the technical ability to coat a DNA strand with metal, we suggest that DNA can be used to built logical devices. We discuss…

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…

We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…