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Density functional theory calculations of electronic transport based on local exchange and correlation functionals contain self-interaction errors. These originate from the interaction of an electron with the potential generated by itself…

介观与纳米尺度物理 · 物理学 2009-11-11 C. Toher , S. Sanvito

A self-consistent method for calculating electron transport through a molecular device is proposed. It is based on density functional theory electronic structure calculations under periodic boundary conditions and implemented in the…

介观与纳米尺度物理 · 物理学 2007-05-23 San-Huang Ke , Harold U. Baranger , Weitao Yang

We study the nonlinear elastic quantum electronic transport properties of nanoscopic devices using the Nonequilibrium Green's function (NEGF) method. The Green's function method allows us to expand the $I-V$ characteristics of a given…

介观与纳米尺度物理 · 物理学 2009-07-14 Alexis R. Hernández , Caio H. Lewenkopf

Computationally inexpensive approximations describing electron-phonon scattering in molecular-scale conductors are derived from the non-equilibrium Green's function method. The accuracy is demonstrated with a first principles calculation on…

介观与纳米尺度物理 · 物理学 2007-05-23 Magnus Paulsson , Thomas Frederiksen , Mads Brandbyge

Based on density functional theory (DFT), we have developed algorithms and a program code to investigate the electron transport characteristics for a variety of nanometer scaled devices in the presence of an external bias voltage. We…

介观与纳米尺度物理 · 物理学 2008-05-14 Woo Youn Kim , Kwang S. Kim

The Non-equilibrium Green's function (NEGF) formalism is a particularly powerful method to simulate the quantum transport properties of nanoscale devices such as transistors, photo-diodes, or memory cells, in the ballistic limit of…

Molecular systems can exhibit a complex, chemically tailorable inner structure which allows for targeting of specific mechanical, electronic and optical properties. At the single-molecule level, two major complementary ways to explore these…

介观与纳米尺度物理 · 物理学 2017-04-05 Rocco Gaudenzi , Maciej Misiorny , Enrique Burzurí , Maarten R. Wegewijs , Herre S. J. van der Zant

The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with…

介观与纳米尺度物理 · 物理学 2026-01-26 Leonard Deuschle , Jiang Cao , Alexandros Nikolaos Ziogas , Anders Winka , Alexander Maeder , Nicolas Vetsch , Mathieu Luisier

Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex…

材料科学 · 物理学 2016-04-13 Daniele Stradi , Umberto Martinez , Anders Blom , Mads Brandbyge , Kurt Stokbro

Electron transport properties in nanostructures can be modeled, for example, by using the semiclassical Wigner formalism or the quantum mechanical Green's functions formalism. We compare the performance and the results of these methods in…

介观与纳米尺度物理 · 物理学 2009-11-10 Paula Havu , Noora Tuomisto , Riikka Vaananen , Martti J. Puska , Risto M. Nieminen

The non-equilibrium Green's function method combined with density functional theory (NEGF-DFT) provides a rigorous framework for simulating nanoscale electronic transport, but its computational cost scales steeply with system size. Recent…

介观与纳米尺度物理 · 物理学 2025-10-21 Zili Tang , Xiaoxin Xie , Guanwen Yao , Ligong Zhang , Xiaoyan Liu , Xing Zhang , Liu Fei

A quantum transport model incorporating spin scattering processes is presented using the non-equilibrium Green's function (NEGF) formalism within the self-consistent Born approximation. This model offers a unified approach by capturing the…

介观与纳米尺度物理 · 物理学 2009-11-11 Ahmet Ali Yanik , Gerhard Klimeck , Supriyo Datta

We analyze how functionality could be obtained within single-molecule devices by using a combination of non-equilibrium Green's functions and ab-initio calculations to study the inelastic transport properties of single-molecule junctions.…

介观与纳米尺度物理 · 物理学 2015-06-03 L. K. Dash , H. Ness , M. J. Verstraete , R. W. Godby

We present a theoretical study of the spin transport properties of mono-atomic magnetic chains with a focus on the spectroscopical features of the I-V curve associated to spin-flip processes. Our calculations are based on the s-d model for…

介观与纳米尺度物理 · 物理学 2015-05-27 Aaron Hurley , Nadjib Baadji , Stefano Sanvito

Transport in molecular electronic devices is different from that in semiconductor mesoscopic devices in two important aspects: (1) the effect of the electronic structure and (2) the effect of the interface to the external contact. A…

介观与纳米尺度物理 · 物理学 2009-11-07 Yongqiang Xue , Supriyo Datta , Mark A. Ratner

Density functional theory (DFT) combined with non-equilibrium Greens functions (NEGF) is a powerful approach to model quantum transport under external bias potentials, at reasonable computational cost. In this work we present a new…

材料科学 · 物理学 2024-07-23 Christian S. Ahart , Sergey Chulkov , Clotilde S. Cucinotta

Electronic transport properties through some model quantum systems are re-visited. A simple tight-binding framework is given to describe the systems where all numerical calculations are made using the Green's function formalism. First, we…

介观与纳米尺度物理 · 物理学 2015-03-19 Santanu K. Maiti

The Non-Equilibrium Green's Function (NEGF) method combined with ab initio calculations has been widely used to study charge transport in molecular junctions. However, the significant computational demands of high-resolution calculations…

计算物理 · 物理学 2026-05-19 Xuan Ji , Qiang Qi , Yueqi Chen , Chen Zhou , Xi Yu

We describe how to apply the recursive Green's function method to the computation of electronic transport properties of graphene sheets and nanoribbons in the linear response regime. This method allows for an amenable inclusion of several…

介观与纳米尺度物理 · 物理学 2013-06-18 Caio H. Lewenkopf , Eduardo R. Mucciolo

Simulations of scanning tunneling microscopy measurements for molecules on surfaces are traditionally based on a perturbative approach, most typically employing the Tersoff-Hamann method. This assumes that the STM tip is far from the sample…

介观与纳米尺度物理 · 物理学 2015-05-13 C. Toher , S. Sanvito
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