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相关论文: Interfaces of correlated electron systems: Propose…

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Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated.…

We investigate the thermoelectric response of correlated electron systems near the density driven Mott transition using the dynamical mean field theory.

强关联电子 · 物理学 2009-10-31 Gunnar Palsson , Gabriel Kotliar

Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…

材料科学 · 物理学 2025-03-26 Zhihao Liu , Zhong Fang , Hongming Weng , Quansheng Wu

Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material…

强关联电子 · 物理学 2009-11-11 Ling Chen , J. K. Freericks

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

Motivated by the direct observation of electronic phase separation in first-order Mott transitions, we model the interface between the thermodynamically coexisting metal and Mott insulator. We show how to model the required slab geometry…

强关联电子 · 物理学 2017-05-24 Juho Lee , Chuck-Hou Yee

Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function…

强关联电子 · 物理学 2009-11-13 Satoshi Okamoto

We study the properties of a quarter-filled system of electrons on a square lattice interacting through a local repulsion $U$ and a nearest-neighbour repulsion $V$ in the limit $V=+\infty$. We identify the ground-state for $U$ large enough…

凝聚态物理 · 物理学 2009-10-22 Frederic Mila

It is now possible to study experimentally the combined effect of disorder and interactions in cold atom physics. Motivated by these developments we investigate the dynamics around the metal-insulator transition (MIT) in a one-dimensional…

量子气体 · 物理学 2012-03-22 Masaki Tezuka , Antonio M. Garcia-Garcia

We have studied transition metal clusters from a quantum information theory perspective using the density-matrix renormalization group (DMRG) method. We demonstrate the competition between entanglement and interaction localization. We also…

量子物理 · 物理学 2015-05-19 G. Barcza , Ö. Legeza , K. H. Marti , M. Reiher

We present a method to analyze the metal-insulator transition (MIT) due to the band overlap mechanism. It is based on a model with the knowledge of the homogeneous electron gas, combined with results based on the quasiparticle…

材料科学 · 物理学 2008-09-24 Takao Kotani , Rei Sakuma

We describe the two-dimensional Mott transition in a Hubbard-like model with nearest neighbors interactions based on a recent solution to the Zamolodchikov tetrahedron equation, which extends the notion of integrability to two-dimensional…

强关联电子 · 物理学 2008-12-10 Federico L. Bottesi , Guillermo R. Zemba

Recent experiments in moir\'{e} transition metal dichalcogenide materials have reported the observation of a continuous bandwidth-tuned transition from a metal to a paramagnetic Mott insulator at a fixed filling of one electron per…

强关联电子 · 物理学 2023-02-13 Sunghoon Kim , T. Senthil , Debanjan Chowdhury

As a prototypical example for a heterostructure combining a weakly and a strongly interacting quantum many-body system, we study the interface between a semiconductor and a Mott insulator. Via the hierarchy of correlations, we derive and…

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused…

强关联电子 · 物理学 2013-08-05 You Zhou , Shriram Ramanathan

We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies…

介观与纳米尺度物理 · 物理学 2007-05-23 G. D. Allison , E. A. Galaktionov , A. K. Savchenko , S. S. Safonov , M. M. Fogler , M. Y. Simmons , D. A. Ritchie

Successive quantum transitions in an intermediate regime are shown to exist between the superfluid and Mott insulating states for interacting bosonic atoms in one dimension with a trapping potential. These transitions, which are caused by…

强关联电子 · 物理学 2013-05-29 Shijie Hu , Yuchuan Wen , Xiaoqun Wang , Yue Yu

We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…

强关联电子 · 物理学 2007-05-23 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…

强关联电子 · 物理学 2015-06-22 H. Ishida , A. Liebsch