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相关论文: Comment on "Fano Resonance for Anderson Impurity S…

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In a recent Comment, Kolf et al. (cond-mat/0503669) state that our analysis of the Fano resonance for Anderson impurity systems [Luo et al., Phys. Rev. Lett 92, 256602 (2004)] is incorrect. Here we want to point out that their comments are…

强关联电子 · 物理学 2007-05-23 H. G. Luo , T. Xiang , X. Q. Wang , Z. B. Su , L. Yu

We present a general theory for the Fano resonance in Anderson impurity systems. It is shown that the broadening of the impurity level leads to an additional and important contribution to the Fano resonance around the Fermi surface,…

强关联电子 · 物理学 2007-05-23 H. G. Luo , T. Xiang , X. Q. Wang , Z. B. Su , L. Yu

The conduction electron density of states nearby a single magnetic impurity, as measured recently by scanning tunneling microscopy (STM), is calculated. It is shown that the Kondo effect induces a narrow Fano resonance as an intrinsic…

强关联电子 · 物理学 2020-04-20 O. Ujsaghy , J. Kroha , L. Szunyogh , A. Zawadowski

The conduction electron density of states nearby single magnetic impurities, as measured recently by scanning tunneling microscopy (STM), is calculated, taking into account tunneling into conduction electron states only. The Kondo effect…

强关联电子 · 物理学 2009-10-31 O. Újsághy , J. Kroha , L. Szunyogh , A. Zawadowski

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity…

介观与纳米尺度物理 · 物理学 2015-05-14 V. N. Mantsevich , N. S. Maslova

The spectroscopic characteristics of systems with adsorbed d impurities on noble metal surfaces should depend on the number and geometric arrangement of the adsorbed atoms and also on their d band filling. Recent experiments using scanning…

材料科学 · 物理学 2009-10-31 M. Weissmann , A. M. Llois

Kondo systems ranging from the single Kondo impurity to heavy fermion materials present us with a plethora of unconventional properties whose theoretical understanding is still one of the major open problems in condensed matter physics.…

强关联电子 · 物理学 2017-01-27 Dirk K. Morr

A simple model is introduced to describe conductance measurements between a scanning tunneling microscope (STM) tip and a noble metal surface with adsorbed transition metal atoms which display the Kondo effect. The model assumes a realistic…

强关联电子 · 物理学 2009-11-10 J. Merino , O. Gunnarsson

We analyze the influence of a local pairing on the quantum interference in nanoscopic systems. As a model system we choose the double quantum dot coupled to one metallic and one superconducting electrode in the T-shape geometry. The…

介观与纳米尺度物理 · 物理学 2020-04-10 Jan Barański , Tomasz Zienkiewicz , Magdalena Barańska , Konrad Jerzy Kapcia

Recently observed tunneling spectra on clean heavy fermion compounds show a lattice periodic Fano lineshape similar to what is observed in the case of tunneling to a Kondo ion adsorbed at the surface. We show that the translation symmetry…

强关联电子 · 物理学 2015-05-19 P. Wolfle , Y. Dubi , A. V. Balatsky

Asymmetric spectral line shapes are a hallmark of interference of a quasi-bound state with a continuum of states. Such line shapes are well known for multichannel systems, for example, in photoionization or Feshbach resonances in molecular…

量子物理 · 物理学 2022-05-18 Prerna Paliwal , Alexander Blech , Christiane P. Koch , Edvardas Narevicius

The observation of the Kondo effect in mesoscopic systems under bias$^{1,2}$ has opened a new chapter in the physics of the Kondo phenomenon. Various types of $dI/dV$, where $I$ and $V$ denote current and source-drain (s-d) bias,…

介观与纳米尺度物理 · 物理学 2013-01-25 Jongbae Hong

The zero-bias resonance in the dI/dV tunneling spectrum recorded using a scanning tunneling microscope above a spin-1/2 magnetic adatom (such as Ti) adsorbed on a decoupling layer on metal surface can be accurately fitted using the…

介观与纳米尺度物理 · 物理学 2012-02-24 Rok Zitko

We consider the theory of Kondo effect and Fano factor energy dependence for magnetic impurity (Co) on graphene. We have performed a first principles calculation and find that the two dimensional $E_1$ representation made of $d_{xz},d_{yz}$…

介观与纳米尺度物理 · 物理学 2009-06-16 T. O. Wehling , H. P. Dahal , A. I. Lichtenstein , M. I. Katsnelson , H. Manoharan , A. V. Balatsky

We consider transport through quantum dots with two tunneling paths. Interference between paths gives rise to Fano resonances exhibiting Kondo-like physics. In studying such quantum dots, we employ a generalized Anderson model which we…

强关联电子 · 物理学 2007-05-23 Robert M. Konik

The Kondo effect describes the scattering of conduction electrons by magnetic impurities, manifesting as an electronic resonance at the Fermi energy with a distinctive temperature evolution. In this letter, we present a critical evaluation…

The Kondo resonance is the spectral manifestation of the Kondo properties of the impurity Anderson model, and also plays a central role in the dynamical mean-field theory (DMFT) for correlated electron lattice systems. This article presents…

强关联电子 · 物理学 2009-11-11 J. W. Allen

The possibility of controlling Fano lineshapes in the electronic transmission is addressed in terms of a simple discrete model within a tight binding framework, in which a finite sized ordered chain is coupled from one side to an infinite…

介观与纳米尺度物理 · 物理学 2009-11-11 Arunava Chakrabarti

We examine the properties of an infinite-$U$ Anderson impurity coupled to both normal and superconducting metals. Both the cases of a quantum dot and a quantum point contact containing an impurity are considered; for the latter, we study…

强关联电子 · 物理学 2009-10-31 Aashish A. Clerk , Vinay Ambegaokar , Selman Hershfield

We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical…

介观与纳米尺度物理 · 物理学 2009-10-31 J. Goeres , D. Goldhaber-Gordon , S. Heemeyer , M. A. Kastner , Hadas Shtrikman , D. Mahalu , U. Meirav
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