相关论文: MeV ion-induced strain at nanoisland-semiconductor…
High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films…
Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…
The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device are optimized. Importantly, the Si-SiO2 interface plays a…
SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diffraction experiments on a single fully-processed and…
We have used medium-energy ion scattering (MEIS) to quantitatively analyze the structure of holmium silicide islands grown on the Si(100) surface. Structure fitting to the experimental data unambiguously shows that the tetragonal silicide…
Developing a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron…
A universal challenge facing the development of electrochemical materials is our lack of understanding of physical and chemical processes at local length scales in 10-100 nm regime, and acquiring this understanding requires a new generation…
Negatively charged nitrogen-vacancy (NV) centers and other color centers in diamonds have emerged as promising platforms for quantum communication, quantum information processing, and nanoscale sensing, owing to their long spin coherence…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Surface strain often controls properties of the material including charge transport and chemical reactivity. Localized surface strain is measured with atomic resolution on (111) ceria nanoparticle surfaces using environmental transmission…
Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material…
The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained…
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and…
Focussed Ion Beam (FIB) milling is a mainstay of nano-scale machining. By manipulating a tightly focussed beam of energetic ions, often gallium (Ga+), FIB can sculpt nanostructures via localised sputtering. This ability to cut solid matter…
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique…
Understanding irradiation-induced strain in silicon carbide (SiC) is essential for designing radiation-tolerant ceramic materials. However, conventional methods often fail to resolve nanoscale strain gradients, especially in polycrystalline…
Nanoindentation is a widely used method for sensitive exploration of the mechanical properties of micromechanical systems. We derived an empirical analysis technique to extract stress-strain field gradient and divergence representations…
We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposited on Si (111) substrate under high flux (3.2x10^10 to…
Creating plasmonic nanoparticles on a tapered optical fiber tip enables a remote SERS sensing probe, ideal for challenging sampling scenarios like biological tissue, specific cells, on-site environmental monitoring, and deep brain…
The Si(111)7x7 surface was observed by reflection electron microscopy (REM) and scanning tunneling microscopy (STM) simultaneously in an ultra-high vacuum electron microscope. The distance between the STM tip and the Si surface was detected…