相关论文: Spin-dependent resistivity at transitions between …
The integer quantum Hall effect is analysed using a transport mechanism with a semi-classic wave packages of electrons in this paper. A strong magnetic field perpendicular to a slab separates the electron current into two branches with…
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…
We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given N^{th} Landau level, the difference in…
Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($\nu$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $\nu=1/2$…
The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the $14$-band ${\bf k}\cdot{\bf p}$ approach without making the axial…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…
Experimental data available in the literature for peak values of the diagonal resistivity in the transitions between fractional quantum Hall states are compared with the theoretical predictions. It is found that the majority of the peak…
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $\nu=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous…
We discuss quantum Hall effect in the presence of arbitrary pair interactions between electrons. It is shown that irrespective of the interaction strength the Hall conductivity is given by the filling fraction of Landau levels averaged over…
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling barrier exhibits a complex Landau level dispersion. Magnetotunneling spectroscopy is employed to investigate the small energy gaps which…
Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $\nu = 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted…
In the strong magnetic field fractional quantum Hall regime, electrons in a two-dimensional electron system are confined to their lowest Landau level. Because of the macroscopic Landau level degeneracy nearly all physical properties at low…
We study the critical spin-polarization energy ($\alpha_{\rm C}$) above which fractional quantum Hall states in two-dimensional electron systems confined to symmetric GaAs quantum wells become fully spin-polarized. We find a significant…
We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels…
We present observations of an anisotropic resistance state at Landau level filling factor $\nu=5/2$ in a two-dimensional hole system (2DHS), which occurs for certain values of hole density $p$ and average out-of-plane electric field…
In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…
The inter-Landau-level spin excitations of quantum Hall states at filling factors nu=2 and 4/3 are investigated by exact numerical diagonalization for the situation in which the cyclotron (hbar*omega_c) and Zeeman (E_Z) splittings are…
The quantum Hall effect is one of the most important developments in condensed matter physics of the 20th century. The standard explanations of the famous integer quantized Hall plateaus in the transverse resistivity are qualitative, and…
We report a new manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic…