相关论文: Measuring carrier density in parallel conduction l…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
We present a microscopic model for a line junction formed by counter or co-propagating single mode quantum Hall edges corresponding to different filling factors. The ends of the line junction can be described by two possible current…
Conductivity and Hall coefficient for various types of t-J ladders are calculated as a function of temperature and frequency by numerical diagonalization. A crossover from an incoherent to a coherent charge dynamics is found at a…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
Constrictions in fractional quantum Hall (FQH) systems not only facilitate backscattering between counter-propagating edge modes, but also may reduce the constriction filling fraction $\nu_c$ with respect to the bulk filling fraction…
A systematic method of calculating the dynamical conductivity tensor in a general multiband electronic model with strong boson-mediated electron-electron interactions is described. The theory is based on the exact semiclassical expression…
A mean field calculation of the $T\to 0$ limit of the Hall conductance of electron-doped cuprates such as $Pr_{2-x}Ce_xCuO_{4+\delta}$ is presented. The data are found to be qualitatively consistent with the reconstruction of the Fermi…
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers…
We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo$_{1-x}$Ni$_x$In$_5$ ($x \leq 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
We report the first experimental observation of magnetic-field-induced quantized charge accumulation in a quantum anomalous Hall (QAH) system -- a phenomenon originating from the intrinsic two-dimensional surface state and fundamentally…
We apply homogenization theory to calculate the effective electric conductivity and Hall coefficient tensor of passive three-dimensionally periodic metamaterials subject to a weak external static homogeneous magnetic field. We not only…
The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the…
We report results of numerical studies of the integer quantum Hall effect in a tight binding model on a two-dimensional square lattice with non-interacting electrons, in the presence of a random potential as well as a uniform magnetic field…
A modulation-doping approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface…
Whether a quantum critical point (QCP) demarcates the end of the pseudogap (PG) regime in hole-doped cuprates at a singular doping level $p^* \approx 0.19$ remains an open question. A crucial part of this puzzle is how the carrier density…
We propose a phenomenological model that describes counterflow and drag experiments with quantum Hall bilayers in a \nu_T=1 state. We consider the system consisting of statistically distributed areas with local total filling factors…
The frictional drag between parallel two-dimensional electron systems has been measured in a regime of strong interlayer correlations. When the bilayer system enters the excitonic quantized Hall state at total Landau level filling factor…
Digital Magnetic Heterostructures (DMH) are semiconductor structures with magnetic monolayers. Here we study electronic and magneto-transport properties of shallow modulation-doped (ZnSe/ZnCdSe) DMHs with spin-5/2 Mn impurities. We compare…
Coulomb interaction between two closely spaced parallel layers of electron system can generate the frictional drag effect by interlayer Coulomb scattering. Employing graphene double layers separated by few layer hexagonal boron nitride…